Impact of Externally Induced Uniaxial Stress on the Electrical Performance of the Junctionless Nanowire Field-Effect Transistors

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-06-20 DOI:10.1109/TDMR.2025.3581604

Nitish Kumar;Ankur Gupta;Pushpapraj Singh

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Abstract

The uniaxial tensile mechanical stress (MS) is induced up to 1.4 GPa on the channel of the twin junctionless nanowire (JL-NW) gate-all-around (GAA) field-effect transistors (FETs) using a four-point bending technique. The variation of the electrical parameters is measured before and during induced MS to analyze the performance. The ON-state current, carrier mobility, threshold voltage, and subthreshold swing are directly proportional to the induced MS due to the reduced energy band gap and intervalley scattering effect. The reduced subthreshold swing indicates low power consumption and better switching ability, whereas the higher OFF-state current leads to slightly increased standby power consumption, representing a trade-off for low-power logic applications. In addition, the change of drain current shows highly piezoresistive sensing ability in nanoelectromechanical sensor applications. Thus, this study demonstrates the importance of mechanical stress engineering for performance improvement in non-planar nanowire devices, piezoresistive sensing applications, and device reliability.

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外诱导单轴应力对无结纳米线场效应晶体管电性能的影响

采用四点弯曲技术，在双无结纳米线（JL-NW）栅极全能场效应晶体管（fet）的沟道上产生了高达1.4 GPa的单轴拉伸机械应力（MS）。在诱导质谱之前和过程中测量了电参数的变化，以分析其性能。导通态电流、载流子迁移率、阈值电压和亚阈值摆幅与由于减小的能带隙和谷间散射效应而产生的诱导质谱成正比。降低的亚阈值摆幅表明低功耗和更好的开关能力，而较高的off状态电流导致待机功耗略有增加，代表了低功耗逻辑应用的权衡。此外，漏极电流的变化在纳米机电传感器应用中表现出高度压阻性的传感能力。因此，本研究证明了机械应力工程对于提高非平面纳米线器件性能、压阻传感应用和器件可靠性的重要性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.