Impact of Electro-Thermal Transport on HCI and BTI Lifetime of Twin Nanowire FETs: Different Operational Modes

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-03-15 DOI:10.1109/TDMR.2025.3570616

Nitish Kumar;Sankatali Venkateswarlu;Ankur Gupta;Pushpapraj Singh

引用次数: 0

Abstract

Nowadays, electro-thermal transport behavior analyzing is important in emerging nanoscale devices because thermal management is a critical issue in improving the device’s performance and cooling strategies. In this article, a comparative study for electro-thermal performance analysis of junctionless and an inversion-mode nanowire gate-all-around (GAA) field-effect transistors (FETs) is presented in advanced technology nodes by considering nonlocal effects. The junctionless device showed ~15.2% better thermal reliability and ~26.7%/37.6% better HCI/BTI lifetime compared to the inversion-mode device. The transient behavior of electro-thermal reliability is also investigated for both devices, where the devices turn on for a short time within a duty cycle, the devices showed better thermal reliability and ~52.8%/68.2% HCI/BTI lifetime improvement. This study also provides strategies for thermal management in advanced node devices.

查看原文本刊更多论文

电热输运对双纳米线场效应管HCI和BTI寿命的影响：不同工作模式

由于热管理是提高器件性能和冷却策略的关键问题，因此对新兴纳米级器件的电热输运行为分析非常重要。在先进的技术节点上，考虑非局域效应，对无结纳米线栅极全能场效应晶体管（fet）和反模式GAA场效应晶体管（fet）的电热性能进行了比较研究。与反转模式器件相比，无结器件的热可靠性提高了~15.2%，HCI/BTI寿命提高了~26.7%/37.6%。对两种器件的热可靠性瞬态行为进行了研究，当器件在一个占空比内开启时间较短时，器件表现出更好的热可靠性和~52.8%/68.2%的HCI/BTI寿命提高。本研究也提供了先进节点装置的热管理策略。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.