Low Temperature HfO₂ Interface Engineering in Dual-Gate and Gate-All-Around MoS₂ Transistors

IF 2.4 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-08-18 DOI:10.1109/JEDS.2025.3600006

Po-Heng Pao;Cheng-Yi Lin;Heng-Tung Hsu;Chao-Hsin Chien

引用次数: 0

Abstract

This paper introduces the deposition of seed layers using a soaking technique to deposit dielectric layers on transition metal dichalcogenides (TMDs). This method addresses the bottleneck caused by the lack of dangling bonds in two-dimensional materials, which hinders the adsorption of precursors during the ALD process. We utilize the Hafnium soak technique, which can facilitate depositing a gate dielectric onto TMDs exhibiting smooth film characteristics and outstanding physical properties. We fabricate dual-gate devices using TMDs with an equivalent oxide thickness (EOT) of 1 nm and a subthreshold swing (S.S.) of 94 mV/dec. Additionally, the soaking technique promotes growth on both the top and back sides of two-dimensional materials, facilitating the development of gate-all-around (GAA) field-effect transistors.

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双栅极和栅极全能MoS 2晶体管的低温HfO 2界面工程

本文介绍了在过渡金属二硫族化合物（TMDs）上采用浸渍法沉积介电层的方法。该方法解决了由于二维材料中缺乏悬空键而导致的瓶颈问题，这阻碍了ALD过程中前驱体的吸附。我们利用铪浸渍技术，可以方便地将栅极电介质沉积在具有光滑薄膜特性和优异物理性能的tmd上。我们使用等效氧化物厚度（EOT）为1 nm，亚阈值摆幅（ss）为94 mV/dec的TMDs制造双栅器件。此外，浸泡技术促进了二维材料的顶部和背面生长，促进了栅极全能场效应晶体管的发展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.