Assessing the impact of process and design variations on reliability of complementary FET

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-08-30 DOI:10.1016/j.sse.2025.109226

Ankit Dixit , Sandeep Kumar , Naveen Kumar , Deven H. Patil , S. Dasgupta , Navjeet Bagga , Luiz Felipe Aguinsky , Vihar Georgiev

引用次数: 0

Abstract

This paper comprehensively analyzes the reliability concerns of the Complementary FET (CFET), engrossing the design parameters and the variability effects. The impact of process-induced variabilities, such as random dopant distribution (RDD), line edge roughness (LER), and metal gate granularity (MGG), is extensively studied through well-calibrated TCAD models. Variation aware compact model based statistical analysis is used to analyze 100 random device samples, which shows a significant spread in the I_DS-V_GS curve (transfer characteristics). Electrical performance based on the grain size and fin width is also analyzed on both n and p-type device. Therefore, the variation in threshold voltage (V_th) is used to predict the early aging of the devices.

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评估工艺和设计变化对互补场效应管可靠性的影响

本文综合分析了互补场效应管的可靠性问题，重点考虑了设计参数和变异性效应。通过校准良好的TCAD模型，广泛研究了随机掺杂分布（RDD）、线边缘粗糙度（LER）和金属栅粒度（MGG）等过程引起的变量的影响。采用基于变化感知紧凑模型的统计分析方法对100个随机设备样本进行了分析，发现IDS-VGS曲线（传输特性）存在显著的扩散。在n型和p型器件上分析了基于晶粒尺寸和翅片宽度的电性能。因此，阈值电压（Vth）的变化可以用来预测器件的早期老化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.