Yu Yan , Cunhua Dou , Xuan Zhang , Weijia Song , Zhiyu Tang , Binhong Li , Jing Wan , Huabin Sun , Xing Zhao , Yun Wang , Yong Xu , Sorin Cristoloveanu
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引用次数: 0
Abstract
The universal burden of series resistance in short-channel MOSFETs is even more critical in ultrathin transistors where the sheet resistance of source and drain terminals is high. However, FD-SOI devices benefit from the back-gate action which can also modulate the series resistance. Several methods for series resistance extraction are examined. Unlike an advanced FD-SOI MOSFET with highly-doped raised terminals, the junctionless transistors (with either conventional or core–shell architecture) exhibit higher series resistance, strongly dependent on back-gate voltage.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.