On the role of power dissipation in the Post-BD behavior of FDSOI NanoWire FETs

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-08-29 DOI:10.1016/j.sse.2025.109228

R. Goyal, A. Crespo-Yepes, M. Porti, R. Rodriguez, M. Nafria

引用次数: 0

Abstract

Dielectric Breakdown, which has been associated with the progressive wear-out of the gate dielectric, has been one of the most detrimental failure mechanisms in CMOS devices. With downscaling, new device architectures and/or materials have been introduced, so, it is necessary to evaluate the BD impact at device (and circuit) level in these new structures. In this work, the dielectric BD and the post-BD behavior in largely scaled FDSOI nanowire transistors with high-k gate dielectric have been characterized, using the energy and the power dissipated by the device under test as key parameters. The experimental results evidence the presence of new detrimental effects for the device’s integrity beyond the traditional dielectric BD.

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功率损耗对FDSOI纳米线场效应管后bd行为的影响

电介质击穿与栅极电介质的逐渐损耗有关，是CMOS器件中最有害的失效机制之一。随着规模的缩小，新的器件架构和/或材料已经被引入，因此，有必要在这些新结构中评估器件（和电路）级别的BD影响。在这项工作中，以被测器件的能量和功耗为关键参数，对具有高k栅极介电介质的FDSOI纳米线晶体管的介电BD和后BD行为进行了表征。实验结果表明，除了传统的介质BD外，还存在新的对器件完整性的不利影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.