Silicon-oxide resistive switching memory based on the HSQ layer

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-08-26 DOI:10.1016/j.sse.2025.109223

Piotr Wiśniewski , Andrzej Mazurak , Alicja Kądziela , Maciej Filipiak , Bartłomiej Stonio , Romuald B. Beck

引用次数: 0

Abstract

In this work, we study the silicon-oxide resistive switching memory based on the hydrogen silsesquioxane (HSQ) layer. We fabricated the Al/HSQ/n++ − Si RRAM (Resistive Random Access Memory) devices and performed electrical characterization. Transport mechanisms for different voltage ranges in High Resistance State (HRS) and Low Resistance State (LRS) were identified and analyzed. We show that spin on the silicon oxide layer can result in good resistive switching properties that can be utilized in the design and fabrication of RRAM devices.

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基于HSQ层的氧化硅电阻开关存储器

本文研究了基于氢硅氧烷（HSQ）层的氧化硅电阻开关存储器。我们制作了Al/HSQ/n++−Si RRAM（电阻随机存取存储器）器件，并进行了电学表征。确定并分析了高阻态和低阻态下不同电压范围的输运机制。我们表明，氧化硅层上的自旋可以产生良好的电阻开关特性，可用于RRAM器件的设计和制造。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.