Ultrathin SnS2 Field‐Effect Transistors Exhibiting Temperature‐Enhanced Memory Performance

Abstract

Tin disulfide (SnS2) is a 2D semiconductor with a wide bandgap exceeding 2.0 eV. A detailed electrical study of back‐gated Schottky‐barrier field‐effect transistors (FETs) based on multilayer SnS2 channels is presented. The devices display n‐type conduction, with current levels increasing with temperature due to thermally activated transport across the contacts. A pronounced hysteresis appears in the transfer characteristics, growing linearly with temperature at a rate of ≈0.5 V K−1, revealing a temperature‐sensitive response that can be explored for sensing functionalities. Remarkably, the same temperature dependence enhances the memory functionality of the devices: the memory window broadens with increasing temperature, and both retention and endurance improve, in contrast to conventional memory technologies. The observed behavior is linked to the modulation of carrier transport at the contacts, where environmental exposure induces barrier asymmetries and inhomogeneities, as confirmed by analysis using the Güttler–Werner model. These results suggest that SnS2‐based FETs may be exploited either for sensing or memory functionality, depending on the operating conditions, outlining a conceptual route toward compact and reconfigurable components in future 2D electronic systems.