Bayesian Design of Metasurface Routers for CMOS Image Sensors via MetaRGBX-Net

IF 4.5 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
JangHyeon Lee;ByoungGyu Kim;Yongkeun Lee
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引用次数: 0

Abstract

This letter presents a Bayesian optimization framework based on MetaRGBX-Net for tuning meta-atom diameters to achieve specific RGB sensitivity and interpixel crosstalk (XTALK) targets. MetaRGBX-Net—developed in prior work—is validated as an effective surrogate model within the optimization process and enables successful tuning of in-bound (IB) configurations, even near distribution boundaries. RGB sensitivity and XTALK errors were both maintained below 10% through balanced trade-offs. Experimental validation confirms these outcomes, emphasizing the impact of penalty weight adjustments—particularly for blue sensitivity, which was more responsive than red or green. In contrast, out-of-bound (OB) configurations resulted in notable performance degradation across all algorithms, with excessive XTALK and unmet RGB targets. These results underscore the framework’s potential and the importance of well-designed penalty functions and target selection for optimal performance.
基于MetaRGBX-Net的CMOS图像传感器超表面路由器的贝叶斯设计
本文提出了一个基于MetaRGBX-Net的贝叶斯优化框架,用于调整元原子直径以实现特定的RGB灵敏度和像素间串扰(XTALK)目标。在之前的工作中开发的metargbx - net在优化过程中被验证为有效的代理模型,并且能够成功调优入界(IB)配置,甚至在分布边界附近。通过平衡权衡,RGB灵敏度和XTALK误差都保持在10%以下。实验验证证实了这些结果,强调了惩罚权重调整的影响——特别是对蓝色的敏感性,它比红色或绿色更敏感。相比之下,出界(OB)配置导致所有算法的性能显著下降,XTALK过多,RGB目标未达到。这些结果强调了框架的潜力以及设计良好的惩罚函数和目标选择对于最佳性能的重要性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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