Bulk Feedback Field-Effect Transistor

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-07-11 DOI:10.1109/LED.2025.3588262

Hakin Kim;Doohyeok Lim

引用次数: 0

Abstract

A feedback field-effect transistor (FBFET) fabricated on a bulk Si substrate is presented. The bulk FBFET features a dual-well structure with multiple p-n junctions on the substrate. This novel structure prevents body leakage and ensures reliable FBFET operation. The bulk FBFET demonstrates unique electrical characteristics, including drain–source current (

${I}_{\text {DS}}\text {)}$

latch-up, latch-down, and hysteresis. During

${I}_{\text {DS}}$

latch-up and latch-down, the bulk FBFET exhibits an extremely low subthreshold swing of less than 1 mV/dec and a high on/off ratio of

$5.71 \times 10^{{5}}$

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体反馈场效应晶体管

提出了一种基于硅基片的反馈场效应晶体管（FBFET）。块状FBFET具有双阱结构，衬底上有多个p-n结。这种新颖的结构防止阀体泄漏，确保可靠的fbet运行。体FBFET具有独特的电特性，包括漏源电流（${I}_{\text {DS}}\text{）}$锁存、锁存和迟滞。在${I}_{\text {DS}}$锁存和锁存期间，体FBFET表现出低于1 mV/dec的极低亚阈值摆幅和高达$5.71 \ × 10^{{5}}$的高开/关比。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.