First Demonstration of High-Temperature Reliability on La:HZO-La:In2O3 FeFET With High Endurance of 1010 at 125 °C

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-07-10 DOI:10.1109/LED.2025.3587573

Min Zeng;Shiwei Yan;Shiyuan Liu;Tianyue Fu;Qianlan Hu;Yanqing Wu

{"title":"First Demonstration of High-Temperature Reliability on La:HZO-La:In2O3 FeFET With High Endurance of 1010 at 125 °C","authors":"Min Zeng;Shiwei Yan;Shiyuan Liu;Tianyue Fu;Qianlan Hu;Yanqing Wu","doi":"10.1109/LED.2025.3587573","DOIUrl":null,"url":null,"abstract":"In this letter, we demonstrate 8 nm and 5 nm lanthanum-doped <inline-formula> <tex-math>$Hf_{{0}.{5}}$ </tex-math></inline-formula> <inline-formula> <tex-math>$Zr_{{0}.{5}}$ </tex-math></inline-formula>O2 (La:HZO) films with excellent ferroelectric and robust reliability at high temperature for the first time. A low saturated operating voltage of 1.2 V and high breakdown field of 9 MV/cm are obtained in 5 nm La:HZO films at the same time. A high endurance of <inline-formula> <tex-math>${3}\\times {10} ^{{11}}$ </tex-math></inline-formula> at room temperature and <inline-formula> <tex-math>$10^{{10}}$ </tex-math></inline-formula> at high temperature of <inline-formula> <tex-math>$125~^{\\circ }$ </tex-math></inline-formula>C is obtained in 5 nm La:HZO films, owing to the superior low Eop/Ebd. Furthermore, we demonstrate a top-gate FeFET on La:In2O3 channel with a channel length of 50 nm, demonstrating superior high endurance of <inline-formula> <tex-math>${3}\\times {10} ^{{11}}$ </tex-math></inline-formula> with a memory window (MW) of 0.9 V at room temperature and <inline-formula> <tex-math>$10^{{10}}$ </tex-math></inline-formula> with a memory window of 0.9 V at high temperature of <inline-formula> <tex-math>$125~^{\\circ }$ </tex-math></inline-formula>C. Besides, our FeFETs exhibit excellent retention exceeding 10 years at <inline-formula> <tex-math>$125~^{\\circ }$ </tex-math></inline-formula>C, showing the great potential of La:HZO for high-reliability ferroelectric applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1632-1635"},"PeriodicalIF":4.5000,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11075827/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

In this letter, we demonstrate 8 nm and 5 nm lanthanum-doped

$Hf_{{0}.{5}}$

$Zr_{{0}.{5}}$

O2 (La:HZO) films with excellent ferroelectric and robust reliability at high temperature for the first time. A low saturated operating voltage of 1.2 V and high breakdown field of 9 MV/cm are obtained in 5 nm La:HZO films at the same time. A high endurance of

${3}\times {10} ^{{11}}$

at room temperature and

$10^{{10}}$

at high temperature of

$125~^{\circ }$

C is obtained in 5 nm La:HZO films, owing to the superior low Eop/Ebd. Furthermore, we demonstrate a top-gate FeFET on La:In2O3 channel with a channel length of 50 nm, demonstrating superior high endurance of

${3}\times {10} ^{{11}}$

with a memory window (MW) of 0.9 V at room temperature and

$10^{{10}}$

with a memory window of 0.9 V at high temperature of

$125~^{\circ }$

C. Besides, our FeFETs exhibit excellent retention exceeding 10 years at

$125~^{\circ }$

C, showing the great potential of La:HZO for high-reliability ferroelectric applications.

查看原文本刊更多论文

La:HZO-La:In2O3 FeFET的高温可靠性首次演示，在125℃下具有1010的高耐久性

在这封信中，我们展示了8nm和5nm镧掺杂的$Hf_{{0}。{5}} $ $ Zr_{{0}。{5}}$ O2 （La:HZO）薄膜首次在高温下具有优异的铁电性和坚固的可靠性。同时在5nm的La:HZO薄膜中获得了1.2 V的低饱和工作电压和9 MV/cm的高击穿场。由于具有较低的Eop/Ebd，在5 nm的La:HZO薄膜在室温下具有${3}\ ×{10} ^{{11}}$，在125~^{\circ}$ C的高温下具有$10^{{10}}$的高耐久性。此外，我们在La:In2O3通道上展示了一个顶栅FeFET，通道长度为50 nm，在室温下具有0.9 V的记忆窗口（MW），具有${3}\ ×{10} ^{{11}}$，在125~^{\circ}$ C的高温下具有0.9 V的记忆窗口（MW），并且我们的FeFET在125~^{\circ}$ C下具有超过10年的优异保留率，显示了La:HZO在高可靠性铁电应用中的巨大潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.