La In Situ Doping-Engineered HZO Capacitors Achieving High- k (~56.2) and Ferroelectricity (2Pr~43.4 μ C/cm2) at 1.5 MV/Cm With 1010 Cycles Endurance

Abstract

This study is motivated by the persistent challenge of developing universal dielectric (DE) materials that simultaneously satisfy DRAM-driven high permittivity and FeRAM-required polarization stability. Here, we report La-doping engineered Hf ${}_{{0}.{5}}$ Zr ${}_{{0}.{5}}$ O2 (HZO) capacitors via in-situ atomic layer deposition (ALD) cycle modulation, implementing a phase-engineering strategy to resolve the permittivity-polarization trade-off. Precise La2O3 inserting induces a morphotropic phase boundary (MPB) like configuration in the HZ1L capacitor, achieving an ultrahigh permittivity ( ${k}\sim ~63.8$ ). Post-wake-up operation demonstrates dual-mode functionality featuring robust ferroelectricity ( $2{P}_{\text {r}} = 43.4~\mu $ C/cm ${}^{{2}}\text {)}$ , low FE saturated voltage ~1.05V (1.5 MV/cm), and stable DE performance (k >56.2) with exceptional endurance ( $\gt 10^{{10}}$ cycles), attributed to coercive field reduction. This dual-phase synergy establishes a universal framework for scalable high-density memory solutions in advanced logic and memory applications.