Role of Oxygen Deficiencies on the Stability of Indium Tin Oxide (ITO) Transistors

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-07-10 DOI:10.1109/LED.2025.3587706

Sumaiya Wahid;Kasidit Toprasertpong;Mahnaz Islam;Aravindh Kumar;Muhammed Ahosan Ul Karim;Harsono Simka;Wong H. S. Philip;Eric Pop

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引用次数: 0

Abstract

We investigate the threshold voltage (

${V}_{T}$

) stability of indium tin oxide (ITO) transistors under positive gate bias stress, comparing the performance of

$\text{Al}_{\mathbf {{2}}}\text {O}_{\mathbf {{3}}}$

and

$\text{HfO}_{\mathbf {{2}}}$

dielectrics. We attribute the unusual negative

${V} _{\mathbf {T}}$

shift (

$\Delta {V}_{T} \lt 0$

V) of our top-gated devices to oxygen scavenging by the dielectric. Notably, devices with

$\text{Al}_{\mathbf {{2}}}\text {O}_{\mathbf {{3}}}$

dielectric achieve median

$\vert \Delta {V}_{T}\vert \le 10$

mV at room temperature,

$\sim 10\times $

lower than devices with

$\text{HfO}_{\mathbf {{2}}}$

, highlighting the significant influence of the dielectric layer. We also demonstrate that opposing effects of the top and bottom gates in a dual-gated transistor can be used to attain a median

$\vert \Delta {V}_{T}\vert \approx ~150$

mV with 2 V gate stress voltage, at elevated temperature (85°C), which is

$\sim 3\times $

lower than the top-gated devices under identical stress conditions.

查看原文本刊更多论文

缺氧对氧化铟锡（ITO）晶体管稳定性的影响

我们研究了氧化铟锡（ITO）晶体管在正栅偏置应力下的阈值电压（${V}_{T}$）稳定性，并比较了$\text{Al}_{\mathbf {{2}}}\text {O}_{\mathbf {{3}}}$和$\text{HfO}_{\mathbf {{2}}}$电介质的性能。我们将顶门控装置不寻常的负${V} _{\mathbf {T}}$位移（$\Delta {V}_{T} \lt 0$ V）归因于电介质对氧气的清除。值得注意的是，介电层为$\text{Al}_{\mathbf {{2}}}\text {O}_{\mathbf {{3}}}$的器件在室温下的中位数mV为$\vert \Delta {V}_{T}\vert \le 10$，比介电层为$\text{HfO}_{\mathbf {{2}}}$的器件低$\sim 10\times $，突出了介电层的显著影响。我们还证明，在高温（85°C）下，双门控晶体管的顶部和底部栅极的相反效应可用于在2 V栅极应力电压下获得中位数$\vert \Delta {V}_{T}\vert \approx ~150$ mV，这比相同应力条件下的顶部门控器件低$\sim 3\times $。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.