Distinctive Quantum Confinement Characteristic of 3 nm Gate-All-Around (GAA) PMOS Multi-Bridge-Channel-FET (MBCFET)

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-06-30 DOI:10.1109/LED.2025.3584056

Hyungwoo Ko;Jooyoung Song;Sungjoon Park;Sugwon Yu;Jinho Choi;Hyeongsub Song;Seunghyun Noh;Sungjae Lee

引用次数: 0

Abstract

In this letter, we demonstrate gate capacitance characteristics of MBCFET compared to those of FinFET, focusing on quantum confinement. Unlike FinFET and NMOS MBCFET, experimental measurement shows that only PMOS MBCFET exhibits a distorted gate capacitance characteristic due to quantum confinement effect, which depends on its silicon orientation and stress. This characteristic originated from the change of the density of states (DOS) is also shown in transconductance as well as the cut-off frequency properties. Furthermore, the impact of the temperature and layout configurations on the distorted capacitance are confirmed through experimental measurement. Using BSIM simulation, the influence of the distorted capacitance-voltage (C-V) characteristic on the performance of ring oscillator (RO) circuits is analyzed.

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3nm栅极全能（GAA） PMOS多桥通道场效应管（MBCFET）的独特量子约束特性

在这封信中，我们展示了mbfet与FinFET的栅极电容特性，重点是量子约束。与FinFET和NMOS MBCFET不同，实验测量表明，只有PMOS MBCFET由于量子约束效应而表现出扭曲的门电容特性，这取决于其硅取向和应力。这种特性源于态密度（DOS）的变化，也表现在跨导和截止频率特性上。此外，通过实验测量证实了温度和布局对电容畸变的影响。利用BSIM仿真，分析了电容电压（C-V）畸变特性对环形振荡器（RO）电路性能的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.