Statistical Study of Large Voltage-Controlled Magnetic Anisotropy in 3X-nm Perpendicular Magnetic Tunnel Junctions

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-07-16 DOI:10.1109/LED.2025.3589956

Jordan Athas;Christian Duffee;Thomas Neuner;Noraica Davila Melendez;Jordan A. Katine;Pedram Khalili Amiri

引用次数: 0

Abstract

Switching of sub-50 nm perpendicular magnetic tunnel junctions (pMTJs) using the voltage-controlled magnetic anisotropy (VCMA) effect has been a persistent challenge in spintronics, especially as devices scale down. This work presents the first comprehensive study of 20 CoFeB/MgO-based 3X-nm voltage-controlled pMTJs with diameters of 30 to 36 nm. The devices consistently demonstrate large VCMA coefficients (mean

$\xi ~\approx ~106$

fJ/Vm), which allow for achieving sub-nanosecond voltage-induced switching, and a mean tunneling magnetoresistance (TMR) greater than 130%. Endurance measurements show a lower bound of

$2\times 10^{{10}}$

reliable write cycles. These results establish a high-VCMA pMTJ material stack for energy-efficient memory, sensing, and computing.

查看原文本刊更多论文

3X-nm垂直磁隧道结中大电压控制磁各向异性的统计研究

利用压控磁各向异性（VCMA）效应开关亚50 nm垂直磁隧道结（pMTJs）一直是自旋电子学中一个持续的挑战，特别是随着器件的缩小。这项工作首次全面研究了20个直径为30至36纳米的CoFeB/ mgo基3X-nm压控pMTJs。该器件始终显示出较大的VCMA系数（平均$\xi ~\approx ~106$ fJ/Vm），这允许实现亚纳秒电压感应开关，并且平均隧道磁电阻（TMR）大于130%. Endurance measurements show a lower bound of $2\times 10^{{10}}$ reliable write cycles. These results establish a high-VCMA pMTJ material stack for energy-efficient memory, sensing, and computing.

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.