Cryogenic Ferroelectric Behavior of Wurtzite Ferroelectrics

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-06-30 DOI:10.1109/LED.2025.3584071

Ruiqing Wang;Jiuren Zhou;Siying Zheng;Feng Zhu;Wenxin Sun;Haiwen Xu;Bochang Li;Yan Liu;Yue Hao;Genquan Han

引用次数: 0

Abstract

This study presents the first experimental exploration into cryogenic ferroelectric behavior in wurtzite ferroelectrics. A breakdown field (

${E}_{\text {BD}}\text {)}$

to coercive field (

${E}_{\text {C}}\text {)}$

ratio of 1.8 is achieved even at 4 K, marking the lowest ferroelectric switching temperature reported for wurtzite ferroelectrics. Additionally, a significant evolution in fatigue behavior is captured, transitioning from hard breakdown to ferroelectricity loss at cryogenic temperatures. These findings unlock the feasibility for wurtzite ferroelectrics to advance wide temperature non-volatile memory.

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纤锌矿铁电体的低温铁电行为

这项研究首次对纤锌矿铁电体的低温铁电行为进行了实验探索。击穿场（${E}_{\text {BD}}\text{）}$与矫顽力场（${E}_{\text {C}}\text{）}$的比值为1.8，这是纤锌矿铁电体所报道的最低铁电开关温度。此外，还捕获了疲劳行为的显著演变，在低温下从硬击穿转变为铁电损耗。这些发现揭示了纤锌矿铁电体推进宽温度非易失性存储器的可行性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.