1200 V Fully-Vertical GaN-on-Si Power MOSFETs

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-07-08 DOI:10.1109/LED.2025.3586947

Yuchuan Ma;Hang Chen;Shuhui Zhang;Huantao Duan;Bin Hu;Huimei Ma;Jianfei Shen;Minghua Zhu;Jin Rao;Chao Liu

引用次数: 0

Abstract

We report 1200 V fully-vertical GaN-on-Si trench MOSFETs with fluorine implanted termination (FIT-MOS). The FIT region with negative fixed charges becomes resistive and naturally isolates the discrete devices, replacing the conventional mesa etching termination (MET), eliminating the electric field crowding effect at the mesa edges, therefore boosting the breakdown voltage of the FIT-MOS to 1277 V from 567 V of the MET-MOS. Moreover, the as-fabricated FIT-MOS exhibits a threshold voltage (

${V}_{\textit {TH}}\text {)}$

of 3.3 V, an ON/OFF ratio of

$\sim 10^{{7}}$

, together with a specific ON-resistance (

${R}_{\textit {ON}, \textit {SP}}\text {)}$

of 5.6 m

$\Omega \cdot $

cm2. These results show great potential of cost-effective GaN-on-Si vertical transistors for kV-class applications.

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1200 V全垂直GaN-on-Si功率mosfet

我们报道了带有氟植入端部（FIT-MOS）的1200 V全垂直GaN-on-Si沟槽mosfet。具有负固定电荷的FIT区具有电阻性，自然地隔离了离散器件，取代了传统的台面蚀刻端接（MET），消除了台面边缘的电场拥挤效应，从而将FIT- mos的击穿电压从MET- mos的567 V提高到1277 V。此外，预制的FIT-MOS的阈值电压（${V}_{\textit {TH}}\text {)}$）为3.3 V，开/关比（$\sim 10^{{7}}$）为，特定导通电阻（${R}_{\textit {ON}, \textit {SP}}\text {)}$）为5.6 m $\Omega \cdot $ cm2。这些结果显示了具有成本效益的GaN-on-Si垂直晶体管在kv级应用中的巨大潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.