EOT of 0.28 nm in MIM Capacitor With Laminated HfZrON and In-Situ NH3 and O2 Plasma Treatments

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-06-30 DOI:10.1109/LED.2025.3584362

Huan Wu;Kuei-Shu Chang-Liao

引用次数: 0

Abstract

A capacitance density (C) of

$12.1~\mu $

F/cm2, dielectric constant (k) of 55, equivalent oxide thickness (EOT) of 0.28 nm, and leakage current density (J

${}_{\text {g}}\text {)}$

$7.1^{\ast } 10^{-{5}}$

A/cm2 in a metal-insulator-metal capacitor (MIMCap) are obtained by using a laminated HfZrON (HZON) dielectric with suitable in-situ NH3 plasma treatments at heterogeneous interfaces and in-situ O2 plasma treatments during ZrO2 deposition. The high performance MIMCap could be attributed to the reduced interface states and oxygen vacancies in HZON dielectric. This laminated HZON is promising for decoupling capacitors in IC and DRAM applications.

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采用层压HfZrON和原位NH3和O2等离子体处理的MIM电容器0.28 nm EOT

采用层压HfZrON （HZON）介质，在非均质界面处进行适当的原位NH3等离子体处理和原位O2等离子体处理，得到金属-绝缘体-金属电容器（MIMCap）的电容密度C为$12.1~\mu $ F/cm2，介电常数k为55，等效氧化物厚度EOT为0.28 nm，漏电流密度J ${{}_{\text {g}}\text {)}$ 7.1^{\ast} 10^{-{5}}$ A/cm2。高性能的MIMCap可归因于HZON介电介质中界面态和氧空位的减少。这种层压HZON有望用于IC和DRAM应用中的去耦电容器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.