Monolithic Integrated, Reconfigurable Gallium Oxide NAND/NOR Gates With Ferroelectric AlScN Gate Stack

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-07-01 DOI:10.1109/LED.2025.3584764

Sisung Yoon;Seungyoon Oh;Yoojin Lim;Ji-Hyeon Park;Dae-Woo Jeon;Geonwook Yoo

引用次数: 0

Abstract

We present monolithic integrated,

$\alpha $

-Ga2O3 reconfigurable NAND and NOR logic gates. Fabricated

$\alpha $

-Ga2O3 field-effect transistors with a ferroelectric AlScN gate stack (FeFET) exhibit memory window of up to 5.5 V at

${V}_{\text {DS}} = 1$

V. Threshold voltage modulation of ~3.8 V is achieved via a program (10 V, 1 s) and erase pulse (−20 V, 1 s), respectively. Moreover, voltage transfer curves of the logic circuit as an inverter confirm hysteretic behaviors with a higher gain during a reverse sweep. Finally, reconfigurable logic operations are successfully demonstrated via two distinct input pulses and a source bias to the driver FeFET. The results demonstrate viability of monolithic integrated, compact Ga2O3 logic circuits.

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单片集成，可重构氧化镓NAND/NOR门与铁电AlScN栅极堆栈

我们提出了单片集成，$\alpha $ -Ga2O3可重构NAND和NOR逻辑门。在${V}_{\text {DS}} = 1$ V时，制备的$\alpha $ -Ga2O3场效应晶体管在${V}_{\text {DS}} = 1$ V时的存储窗口高达5.5 V，分别通过程序（10 V, 1 s）和擦除脉冲（- 20 V, 1 s）实现~3.8 V的阈值电压调制。此外，作为逆变器的逻辑电路的电压传递曲线证实了反向扫描期间具有较高增益的滞回行为。最后，通过两个不同的输入脉冲和驱动场效应管的源偏置，成功地演示了可重构逻辑操作。结果证明了单片集成、紧凑的Ga2O3逻辑电路的可行性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.