A 160-Gb/s D-Band Bi-Directional CMOS Mixer Covering 112–170 GHz for 6G Transceivers

IF 2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Chenxin Liu;Yudai Yamazaki;Anyi Tian;Chun Wang;Hans Herdian;Abanob Shehata;Han Nie;Minzhe Tang;Hiroyuki Sakai;Kazuaki Kunihiro;Atsushi Shirane;Kenichi Okada
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引用次数: 0

Abstract

This work presents a D-band bi-directional CMOS double-balanced mixer (DBM) supporting data rates over 160 Gb/s with a 58-GHz RF bandwidth (112–170 GHz). The mixer employs four identical NMOS passive switches ( $12~\mu $ m/60 nm) in a DBM topology, providing the isolation between RF, LO, and IF ports. Both IF and RF are bi-directional, enabling up conversion and down conversion. The proposed mixer is fabricated in a 65-nm CMOS process with an integrated LO-driver amplifier. LO amplifier has a 9.5-dB simulated gain and an 8-dBm saturated output power. The total area, including RF and DC pads is 0.7749 mm2. The measurement result shows a −12.5-dB conversion gain in both directions with differential signals and a 3-dB extra loss in a single-ended configuration. $\mathrm { OP_{1dB}}$ is −13.5 dBm for up conversion and −5.5 dBm for down conversion. In modulated signal measurements, the mixer handles a 40-GHz bandwidth OFDM 16-QAM signal centered at 135 GHz, demonstrating a 160-Gb/s data rate in both up conversion and down conversion.
一种覆盖112-170 GHz的160gb /s d波段双向CMOS混频器,用于6G收发器
这项工作提出了一种d波段双向CMOS双平衡混频器(DBM),支持数据速率超过160 Gb/s, 58 GHz RF带宽(112-170 GHz)。该混频器在DBM拓扑中采用四个相同的NMOS无源开关($12~\mu $ m/60 nm),提供RF、LO和IF端口之间的隔离。中频和射频都是双向的,支持上变频和下变频。该混频器采用65纳米CMOS工艺制造,并集成了lo驱动放大器。LO放大器具有9.5 db模拟增益和8 dbm饱和输出功率。包括射频和直流焊盘在内的总面积为0.7749 mm2。测量结果显示,差分信号在两个方向上的转换增益为- 12.5 db,单端配置时的额外损耗为3 db。$\mathrm {OP_{1dB}}$为- 13.5 dBm用于上转换,- 5.5 dBm用于下转换。在调制信号测量中,混频器处理以135 GHz为中心的40 GHz带宽OFDM 16-QAM信号,在上行转换和下行转换中都显示出160 gb /s的数据速率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
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