Total Ionizing Dose Hardening Methodology in Back Gate Embedded SOI MOSFETs With Ultrathin Buried Oxide

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-07-10 DOI:10.1109/LED.2025.3587666

Yuxin Liu;Qiang Liu;Jin Chen;Wenjie Yu

引用次数: 0

Abstract

A novel total ionizing dose (TID) hardening method is proposed based on the innovative back gate embedded silicon on insulator (BGESOI) technology. By elaborately designing the manufacturing process, the symmetric split gate configuration is constructed within the standard CMOS platforms. Notably, the BGESOI MOSFET features ~6nm buried oxide, which is thinner than that in typical fully depleted silicon on insulator (FDSOI) devices, thereby achieving enhanced TID tolerance. The device exhibits a threshold voltage (

${V}_{\text {th}}\text {)}$

shift of around -30mV @7Mrad(Si) which can be further compensated by adjusting the back gate bias by only ~80mV thanks to its ultrahigh body factor (

$\ge 350$

mV/V). This work presents a promising solution for robust TID hardening in extremely harsh radiation environments.

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超薄埋藏氧化物后栅埋入SOI mosfet的总电离剂量硬化方法

提出了一种基于新型绝缘体上嵌硅后门（BGESOI）技术的总电离剂量（TID）硬化方法。通过精心设计制造工艺，在标准CMOS平台内构建对称分闸结构。值得注意的是，BGESOI MOSFET具有~6nm的埋藏氧化物，比典型的完全耗尽绝缘体上硅（FDSOI）器件更薄，从而增强了TID耐受性。该器件的阈值电压（${V}_{\text {th}}}\text{）}$移位约为-30mV @7Mrad(Si)，由于其超高的体因子（$ $ 350$ mV/V），可以通过调整后门偏置进一步补偿~80mV。这项工作为在极端恶劣的辐射环境下进行坚固的TID硬化提供了一个有希望的解决方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.