High-Performance β-Ga2O3 Alpha Particle Detector With 4.3% Energy Resolution

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-07-10 DOI:10.1109/LED.2025.3586879

Shiyu Bai;Xiangdong Meng;Xiaohu Hou;Yuncheng Han;Zhao Han;Zhenghang Xu;Yan Liu;Lei Ren;Xiaolong Zhao;Xuanze Zhou;Guangwei Xu;Shibing Long

引用次数: 0

Abstract

Alpha particle detectors with high energy resolution are urgently needed in various environmental monitoring applications, basic fields of high-energy physics, and new energy development. In this work, based on NiO/

$\beta $

-Ga2O3 heterojunction diodes with mesa termination, the highest energy resolution of 4.3% for 5486 keV

$\alpha $

particles in Ga2O3 particle detectors reported so far is achieved. The high detection performance is attributed to the suppression of leakage current by the mesa structure and the alpha particle collimation scheme introduced in the test. In addition, the performance of the detector shows high stability under continuous operation. These results provide a feasible strategy for the design of high-performance Ga2O3-based ionizing radiation detectors.

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具有4.3%能量分辨率的高性能β-Ga2O3 α粒子探测器

高能粒子探测器在各种环境监测应用、高能物理基础领域和新能源开发中都是迫切需要的。在本工作中，基于NiO/ $\beta $ -Ga2O3的异质结二极管具有台面端接，最高能量分辨率为4.3% for 5486 keV $\alpha $ particles in Ga2O3 particle detectors reported so far is achieved. The high detection performance is attributed to the suppression of leakage current by the mesa structure and the alpha particle collimation scheme introduced in the test. In addition, the performance of the detector shows high stability under continuous operation. These results provide a feasible strategy for the design of high-performance Ga2O3-based ionizing radiation detectors.

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.