Synthetic Antiferromagnet Reversal—Role of Thermal and Magnetic Stress and Impact on Functionality of STT-MRAM

IF 3.2 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-07-15 DOI:10.1109/TED.2025.3586827

Meike Hindenberg;Johannes Müller;Christoph Durner;Daniel Sanchez Hazen;Martin Weisheit;Thomas Mikolajick

{"title":"Synthetic Antiferromagnet Reversal—Role of Thermal and Magnetic Stress and Impact on Functionality of STT-MRAM","authors":"Meike Hindenberg;Johannes Müller;Christoph Durner;Daniel Sanchez Hazen;Martin Weisheit;Thomas Mikolajick","doi":"10.1109/TED.2025.3586827","DOIUrl":null,"url":null,"abstract":"We investigate the response of magnetic tunnel junction (MTJ) devices based on GlobalFoundries 22FDX <xref>1</xref> embedded-magnetic random access memory (MRAM) technology to external thermal and magnetic stress. An anomalous reversal of the reference system was observed in some devices when subjected to a constant static external magnetic field at temperatures as high as <inline-formula> <tex-math>$150~^{\\circ }$ </tex-math></inline-formula>C. The strength of the external magnetic field, ambient temperature, MTJ diameter, and composition of the synthetic antiferromagnet (SAF) reference system all affect the severity of the reference system’s instability. In this study, we show that while a SAF reversal in single-bit MTJ devices reverses the direction of their <italic>R</i>–<italic>H</i> hysteresis loop and so their switching field and offset field polarity, it does not significantly impact their electrical switching behavior. Furthermore, we experimentally show that the functionality of 40-Mbit MRAM arrays with a pitch of approximately 200 nm remains unaffected by the SAF configuration and consequent offset field polarity of the individual devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"4844-4850"},"PeriodicalIF":3.2000,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11080341","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11080341/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

We investigate the response of magnetic tunnel junction (MTJ) devices based on GlobalFoundries 22FDX 1 embedded-magnetic random access memory (MRAM) technology to external thermal and magnetic stress. An anomalous reversal of the reference system was observed in some devices when subjected to a constant static external magnetic field at temperatures as high as

$150~^{\circ }$

C. The strength of the external magnetic field, ambient temperature, MTJ diameter, and composition of the synthetic antiferromagnet (SAF) reference system all affect the severity of the reference system’s instability. In this study, we show that while a SAF reversal in single-bit MTJ devices reverses the direction of their R–H hysteresis loop and so their switching field and offset field polarity, it does not significantly impact their electrical switching behavior. Furthermore, we experimentally show that the functionality of 40-Mbit MRAM arrays with a pitch of approximately 200 nm remains unaffected by the SAF configuration and consequent offset field polarity of the individual devices.

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合成反铁磁体——热、磁应力的作用及其对STT-MRAM功能的影响

研究了基于GlobalFoundries 22FDX 1嵌入式磁随机存取存储器（MRAM）技术的磁隧道结（MTJ）器件对外部热应力和磁应力的响应。在温度高达$150~^{\circ}$ c的恒定静态外磁场作用下，在某些器件中观察到参照系的反常反转。外磁场强度、环境温度、MTJ直径和合成反铁磁体（SAF）参照系的组成都会影响参照系不稳定的严重程度。在这项研究中，我们表明，虽然单比特MTJ器件中的SAF反转反转了它们的R-H磁滞回线的方向，因此它们的开关场和偏移场极性，但它不会显著影响它们的电开关行为。此外，我们通过实验表明，间距约为200 nm的40 mbit MRAM阵列的功能不受SAF配置和相应的单个器件的偏移场极性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.