A Schottky barrier field-effect transistor platform with variable Ge content on SOI

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-08-23 DOI:10.1016/j.sse.2025.109221

Andreas Fuchsberger , Lukas Wind , Aníbal Pacheco-Sanchez , Johannes Aberl , Moritz Brehm , Lilian Vogl , Peter Schweizer , Masiar Sistani , Walter M. Weber

引用次数: 0

Abstract

Advancing SOI-based transistors with Ge-rich layers aims to increase device performance in terms of on-state operation and switching speed. Here, we investigate multi-heterojunction SiGe-based Schottky barrier FETs with Ge concentrations up to 75% by means of temperature- dependent electrical characterizations to identify the transport regimes and the effective barrier heights with a thermionic-emission-based model. Importantly, incorporating 33% Ge gives the best compromise for n- and p-type on-state symmetry. As the Ge concentration increases, the p-type on-state current becomes dominant, which is interesting for low-power p-type transistors.

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SOI上可变锗含量的肖特基势垒场效应晶体管平台

推进具有富锗层的基于soi的晶体管旨在提高器件在导通操作和开关速度方面的性能。在这里，我们研究了Ge浓度高达75%的多异质结硅基肖特基势垒场效应管，通过温度相关的电特性来确定输运机制和基于热离子发射的有效势垒高度。重要的是，加入33%的Ge为n型和p型的态对称提供了最好的折衷方案。随着锗浓度的增加，p型导通电流占主导地位，这对于低功率p型晶体管来说是有趣的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.