Statistical enhancement in two-particle Device Monte Carlo

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-08-26 DOI:10.1016/j.sse.2025.109210

Josef Gull, Hans Kosina

引用次数: 0

Abstract

A novel two-particle Monte Carlo (MC) transport model has been developed and applied to determine the energy distribution function (EDF) in a MOSFET. A dedicated statistical enhancement algorithm enhances the number of samples at higher energies. A comparison with the well-established one-particle MC method and a related enhancement method is presented.

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蒙特卡罗双粒子器件的统计增强

建立了一种新的双粒子蒙特卡罗输运模型，并将其应用于确定MOSFET中的能量分布函数。一个专用的统计增强算法在更高的能量下增加样本的数量。并与已有的单粒子MC方法和相应的增强方法进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.