PowderMEMS® magnets as enabler for miniaturized NV based quantum sensors and quantum processor architectures

IF 3.1 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Micro and Nano Engineering Pub Date : 2025-08-23 DOI:10.1016/j.mne.2025.100316

Mario Bähr , Björn Gojdka , Thomas Lisec , Niels Clausen , Mani Teja Bodduluri , Aya Zino , Indira Käpplinger , Dominik Karolewski , Jan Meijer , Thomas Ortlepp

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Abstract

The implementation of PowderMEMS® micromagnets of varying shapes, with lateral dimensions of 700 μm and 800 μm, into 2.3 × 2.3 × 0.525 mm³ silicon chips has been demonstrated successfully. These chips have been utilized as functionalized interposer for micro-scaled quantum devices. PowderMEMS® micromagnets offer a high biasing magnetic field flux density ranging from 30 mT to 35 mT over a distance of 100 μm depending on the size and shape of the micromagnets. This magnetic field strength (B_Z) was proven by room temperature ODMR measurements with NV centers in diamond: B_Z was measured over a range of distances, extending to 6 mm from the center of the micromagnets. The evaluation involved the analysis of Zeeman splitting. Furthermore, a Hall measurement setup was employed to map the lateral distribution of the magnetic field strength.

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PowderMEMS®磁体是小型化基于NV的量子传感器和量子处理器架构的推动者

在2.3 × 2.3 × 0.525 mm3硅芯片上成功实现了横向尺寸为700 μm和800 μm的不同形状的PowderMEMS®微磁体。这些芯片已被用作微尺度量子器件的功能化中间体。PowderMEMS®微磁体提供高偏置磁场磁通密度，范围为30 mT至35 mT，距离为100 μm，具体取决于微磁体的尺寸和形状。这种磁场强度（BZ）是通过金刚石中NV中心的室温ODMR测量来证明的：BZ是在距离微磁体中心6毫米的距离范围内测量的。评价包括对塞曼分裂的分析。此外，采用霍尔测量装置来绘制磁场强度的横向分布。

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