An All-GaN cascode device with integrated plane-parallel capacitor with high dynamic breakdown voltage and high switching performance

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-08-19 DOI:10.1016/j.sse.2025.109219

Jinyi Wang , Yian Yin , Qiao Sun , Chunxiao Zhao , Qian Zeng , Jiahao Du , Yele Qu , Tiankai Wang , Nan Jiang

{"title":"An All-GaN cascode device with integrated plane-parallel capacitor with high dynamic breakdown voltage and high switching performance","authors":"Jinyi Wang , Yian Yin , Qiao Sun , Chunxiao Zhao , Qian Zeng , Jiahao Du , Yele Qu , Tiankai Wang , Nan Jiang","doi":"10.1016/j.sse.2025.109219","DOIUrl":null,"url":null,"abstract":"<div><div>All-GaN Cascode devices have been shown to have higher switching speeds than standalone E-mode devices. However, during the switching process of the device, the breakdown voltage drops significantly, this will greatly reduce the reliability of the device, especially in the presence of voltage overshoot. In this paper, an All-GaN Cascode structure with integrated plane-parallel capacitor structure is proposed, and the breakdown voltage in the switching process is referred to as the dynamic breakdown voltage. The test results show that the dynamic breakdown voltage is increased from 497 V to 639 V compared with the conventional structure. In addition, a dual-pulse test circuit is set up to test the switching performance of All-GaN Cascode devices under different conditions, it is proved that the series structure of All-GaN Cascode device can reduce the deterioration of switching performance caused by the increase of capacitance. The above results indicate that All-GaN Cascode devices may have great application potential in high speed and high voltage switching circuits.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"229 ","pages":"Article 109219"},"PeriodicalIF":1.4000,"publicationDate":"2025-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110125001649","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

All-GaN Cascode devices have been shown to have higher switching speeds than standalone E-mode devices. However, during the switching process of the device, the breakdown voltage drops significantly, this will greatly reduce the reliability of the device, especially in the presence of voltage overshoot. In this paper, an All-GaN Cascode structure with integrated plane-parallel capacitor structure is proposed, and the breakdown voltage in the switching process is referred to as the dynamic breakdown voltage. The test results show that the dynamic breakdown voltage is increased from 497 V to 639 V compared with the conventional structure. In addition, a dual-pulse test circuit is set up to test the switching performance of All-GaN Cascode devices under different conditions, it is proved that the series structure of All-GaN Cascode device can reduce the deterioration of switching performance caused by the increase of capacitance. The above results indicate that All-GaN Cascode devices may have great application potential in high speed and high voltage switching circuits.

查看原文本刊更多论文

一种具有高动态击穿电压和高开关性能的集成平面并联电容器的全氮化镓级联器件

全氮化镓Cascode器件已被证明比独立的E-mode器件具有更高的开关速度。但是，在器件的开关过程中，击穿电压显著下降，这将大大降低器件的可靠性，特别是在存在电压超调的情况下。本文提出了一种集成平面并联电容器结构的全氮化镓级联码结构，开关过程中的击穿电压称为动态击穿电压。试验结果表明，与传统结构相比，动态击穿电压由497 V提高到639 V。此外，搭建了双脉冲测试电路，对不同条件下All-GaN Cascode器件的开关性能进行了测试，证明了All-GaN Cascode器件的串联结构可以减少因电容增大而导致的开关性能的恶化。以上结果表明，All-GaN Cascode器件在高速高压开关电路中具有很大的应用潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.