Dual optical thermometry in the near-infrared: temperature-driven luminescence in Yb3+/Er3+‐doped NaYF4 phosphor

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-08-23 DOI:10.1016/j.mssp.2025.109981

Sushree Bedamati , R. Arun Kumar , Przemysław Woźny , Natalia Jurga , Kaushal Kumar

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Abstract

A dual-modal luminescence thermometer is developed based on its attention in scientific research and daily life using erbium and ytterbium co-doped sodium yttrium tetrafluoride phosphors which were synthesized by the microwave-assisted combustion technique. The structural information of the synthesized phosphors were learnt using the powder X-ray diffraction technique. The micro-particulate nature and the homogeneous distribution of particles were confirmed through SEM and EDX studies. The optical bandgap was found to be 4.92 eV from the UV–Vis–NIR absorption spectroscopy. The optical properties were studied by recording the photoluminescence spectra for NaYF₄:3 mol% Yb³⁺, y mol% Er³⁺ samples, and their colorimetric and photometric properties were additionally investigated. The prepared phosphors exhibit the relative sensitivities of 1.08 %K⁻¹, 1.26 %K⁻¹, 0.11 %K⁻¹ as obtained through the FIR (TCL), FIR (NTCL), and chromaticity coordinates, respectively. The photoluminescent performances certify that phosphor has a wide range of possible application in display technique, temperature sensing in addition to IR detection.

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近红外双光学测温：Yb3+/Er3+掺杂NaYF4荧光粉的温度驱动发光

利用微波辅助燃烧技术合成的掺铒和掺镱的四氟化钇钠荧光粉，在科研和生活中引起了人们的重视，研制了一种双峰发光温度计。利用粉末x射线衍射技术获得了合成荧光粉的结构信息。通过SEM和EDX研究证实了颗粒的微颗粒性质和均匀分布。通过紫外-可见-近红外光谱分析发现其带隙为4.92 eV。通过记录NaYF4:3 mol% Yb3+， y mol% Er3+样品的光致发光光谱，研究了其光学性质，并对其比色和光度特性进行了研究。通过FIR （TCL）、FIR （NTCL）和色度坐标，制备的荧光粉的相对灵敏度分别为1.08%、1.26%和0.11% K−1。光致发光性能证明了荧光粉除了红外探测外，在显示技术、温度传感等方面具有广泛的应用前景。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.