High performance room-temperature NH3 sensor based on WO3/ZnO heterostructure

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-08-23 DOI:10.1016/j.mssp.2025.109992

Yongqiang Liu , Jin Li

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Abstract

Reliable selectivity and low power consumption are two inevitable requirements for the new generation of gas sensors. In this paper, NH₃ sensors based on WO₃/ZnO with high sensing performance at room temperature were prepared. Compared with the conventional WO₃-based gas-sensitive sensor, the WO₃/ZnO-2 gas-sensitive sensor exhibits high response (91.62, 50 ppm), high selectivity, and long-term stability at room temperature. Moreover, it also achieves fast response/recovery times (3.5 s/1.6 s) and low theoretical limit of detection (0.127 ppm), which makes it possible to detect the presence of low concentrations of NH₃ quickly. The excellent gas-sensitive performance of the sensor can be ascribed to the synergistic interaction between WO₃ and ZnO, as well as the increase in oxygen vacancy and adsorbed oxygen content. This study provides guidance for developing cost-effective and high-performance room temperature NH₃ sensors.

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基于WO3/ZnO异质结构的高性能室温NH3传感器

可靠的选择性和低功耗是对新一代气体传感器的两个必然要求。本文制备了常温下具有高传感性能的基于WO3/ZnO的NH3传感器。与传统的WO3基气敏传感器相比，WO3/ZnO-2气敏传感器在室温下具有高响应（91.62,50 ppm）、高选择性和长期稳定性。此外，它还实现了快速的响应/恢复时间（3.5 s/1.6 s）和低理论检测限（0.127 ppm），这使得可以快速检测低浓度NH3的存在。该传感器优异的气敏性能可归因于WO3和ZnO之间的协同作用，以及氧空位和吸附氧含量的增加。本研究为开发高性价比、高性能的室温NH3传感器提供了指导。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.