{"title":"Microstructural evolution and residual stress distribution of 55 % SiCp/ZL102 composite joint brazed with Al77Cu20Ti3 filler","authors":"Siyan Fan, Dongfeng Cheng","doi":"10.1016/j.mssp.2025.109987","DOIUrl":null,"url":null,"abstract":"<div><div>In this study, the 55 % SiCp/ZL102 composite was connected by the Al<sub>77</sub>Cu<sub>20</sub>Ti<sub>3</sub> filler through vacuum brazing. The effect of the holding time on the microstructure evolution and mechanical properties of brazed joints was investigated. It was found that with the extension of the holding time, the reactants in the weld were increased, and the Ti-Al-Si ternary compound was the main compound in the weld. The Si element mainly came from the diffusion of the matrix alloy. The maximum shear strength of 81 MPa was obtained for joints brazed at 590 °C for 45 min. The fracture is distributed with tear ridges and tongue-like patterns, which is quasi-cleavage fracture. The finite element software ABAQUS was used to simulate the residual stress of the brazed joint. The simulation results showed that the mismatch of deformation degree between the filler and the base metal caused residual stress concentrated in the brazing seam.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109987"},"PeriodicalIF":4.6000,"publicationDate":"2025-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125007243","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, the 55 % SiCp/ZL102 composite was connected by the Al77Cu20Ti3 filler through vacuum brazing. The effect of the holding time on the microstructure evolution and mechanical properties of brazed joints was investigated. It was found that with the extension of the holding time, the reactants in the weld were increased, and the Ti-Al-Si ternary compound was the main compound in the weld. The Si element mainly came from the diffusion of the matrix alloy. The maximum shear strength of 81 MPa was obtained for joints brazed at 590 °C for 45 min. The fracture is distributed with tear ridges and tongue-like patterns, which is quasi-cleavage fracture. The finite element software ABAQUS was used to simulate the residual stress of the brazed joint. The simulation results showed that the mismatch of deformation degree between the filler and the base metal caused residual stress concentrated in the brazing seam.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.