Reduced Topography After Stop on Nitride (SON) STI CMP Through Improved Post-Bulk Planarity for Diverse Layouts in Advanced Nodes

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Semiconductor Manufacturing Pub Date : 2025-07-02 DOI:10.1109/TSM.2025.3584390

Max Constantin Klotzsche;Shubhada Sunil Shetti;Benjamin Lilienthal-Uhlig;Conrad Guhl

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Abstract

Three methods for improving planarization in a ceria free, two step STI CMP process were investigated using patterned test wafers representing 2X nm technology. It was found that within die non-uniformity (WIDNU) after bulk CMP can be improved with (1) higher oxide overburden, (2) reduced bulk polish pressure and (3) intermittent polishing by up to 15, 30 and 41% respectively. Intermittent polishing consists of alternating polish and water rinse intervals with continuous conditioning. By combining these methods up to 33% lower WIDNU is achieved post-SON, while oxide dishing for large open areas on the scale of 0.1 and 1 mm is reduced by up to 43% and 46% respectively. All three methods only require minor process changes and may help silica slurry to replace common ceria slurry in certain applications where price, particle contamination, sustainability and supply risk are the deciding factors.

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通过改进先进节点中不同布局的后体平面度来减少氮化停车后（SON） STI CMP的地形

利用代表2X纳米技术的图像化测试晶片，研究了三种改善无铈两步STI CMP工艺平面化的方法。研究发现，块体CMP后的模内不均匀性（WIDNU）可以通过(1)更高的氧化物覆盖层，(2)降低块体抛光压力和(3)间歇抛光分别提高15%，30%和41%。间歇抛光由交替抛光和水冲洗间隔与连续调理。通过结合这些方法，可将son后的WIDNU降低33%，而0.1和1 mm的大开放区域的氧化盘分别降低43%和46%。这三种方法只需要微小的工艺改变，并且可以帮助二氧化硅浆料在价格、颗粒污染、可持续性和供应风险是决定因素的某些应用中取代普通的二氧化硅浆料。

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来源期刊

IEEE Transactions on Semiconductor Manufacturing 工程技术-工程：电子与电气

CiteScore

5.20

自引率

11.10%

发文量

101

审稿时长

3.3 months

期刊介绍： The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.