Ar/N₂ Gas Flow Rate Dependence on the Ferroelectric HfNₓ Thin Film Formation by ECR-Plasma Sputtering

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Semiconductor Manufacturing Pub Date : 2025-06-02 DOI:10.1109/TSM.2025.3575588

Kangbai Li;Shun-Ichiro Ohmi

{"title":"Ar/N₂ Gas Flow Rate Dependence on the Ferroelectric HfNₓ Thin Film Formation by ECR-Plasma Sputtering","authors":"Kangbai Li;Shun-Ichiro Ohmi","doi":"10.1109/TSM.2025.3575588","DOIUrl":null,"url":null,"abstract":"In this paper, the Ar/N2 gas flow rate dependence on the ferroelectric HfNx (x>1) formed by electron cyclotron resonance (ECR)-plasma sputtering was investigated. The equivalent oxide thickness (EOT) of 2.7 nm was obtained with Ar/N2 gas flow rate of 8/7 sccm followed by the 400°C/5 min post metallization annealing (PMA) in N2. The EOT was increased to 4.2 nm with the deposition of the Ar/N2 gas flow rate of 14/16 sccm. The density of interface states (Dit) was found to be as low as <inline-formula> <tex-math>$2.0\\times 10{^{{11}}}$ </tex-math></inline-formula> <inline-formula> <tex-math>${\\mathrm {cm}}^{-2}$ </tex-math></inline-formula><inline-formula> <tex-math>${\\mathrm {eV}}^{-1}$ </tex-math></inline-formula>. The P-V results demonstrate that a remanent polarization (2Pr) of <inline-formula> <tex-math>$6.6~\\mu $ </tex-math></inline-formula>C/cm2, and positive-up negative-down measurement showed the switching polarization of <inline-formula> <tex-math>$4.7~\\mu $ </tex-math></inline-formula>C/cm2 at an Ar/N2 flow rate of 8/7 sccm, which is high enough for metal-ferroelectric-Si field-effect transistor (MFSFET) application.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"38 3","pages":"459-462"},"PeriodicalIF":2.3000,"publicationDate":"2025-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Semiconductor Manufacturing","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11021378/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

In this paper, the Ar/N2 gas flow rate dependence on the ferroelectric HfNx (x>1) formed by electron cyclotron resonance (ECR)-plasma sputtering was investigated. The equivalent oxide thickness (EOT) of 2.7 nm was obtained with Ar/N2 gas flow rate of 8/7 sccm followed by the 400°C/5 min post metallization annealing (PMA) in N2. The EOT was increased to 4.2 nm with the deposition of the Ar/N2 gas flow rate of 14/16 sccm. The density of interface states (Dit) was found to be as low as

$2.0\times 10{^{{11}}}$

${\mathrm {cm}}^{-2}$

${\mathrm {eV}}^{-1}$

. The P-V results demonstrate that a remanent polarization (2Pr) of

$6.6~\mu $

C/cm2, and positive-up negative-down measurement showed the switching polarization of

$4.7~\mu $

C/cm2 at an Ar/N2 flow rate of 8/7 sccm, which is high enough for metal-ferroelectric-Si field-effect transistor (MFSFET) application.

查看原文本刊更多论文

Ar/ n2气体流速对铁电HfNₓecr -等离子溅射薄膜形成的影响

本文研究了电子回旋共振(ECR)-等离子溅射形成的铁电体HfNx （x>1）对Ar/N2气体流速的依赖关系。在Ar/N2气体流量为8/7 sccm的条件下，在N2中进行400℃/5 min的金属化后退火（PMA），得到了2.7 nm的等效氧化物厚度（EOT）。当Ar/N2气体流速为14/16 sccm时，EOT增大到4.2 nm。界面态密度（Dit）低至$2.0\乘以10{^{{11}}}$ ${\mathrm {cm}}^{-2}$ ${\mathrm {eV}}^{-1}$。P-V结果表明，在Ar/N2流量为8/7 sccm时，剩余极化（2Pr）为$6.6~\mu $ C/cm2，正上负下测量显示，开关极化为$4.7~\mu $ C/cm2，足以用于金属-铁电-硅场效应晶体管（mfset）应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Semiconductor Manufacturing 工程技术-工程：电子与电气

CiteScore

5.20

自引率

11.10%

发文量

101

审稿时长

3.3 months

期刊介绍： The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.