Fault diagnosis of SiC MOSFETs based on time-frequency analysis of acoustic emission signals

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-08-21 DOI:10.1016/j.microrel.2025.115897

Yongjiang Lei , Wenbiao Zhang , Menglin Liu , Lei Chi

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引用次数: 0

Abstract

In the high-frequency switching applications of SiC MOSFETs, traditional techniques are faced with challenges in achieving non-invasiveness measurement, real-time evaluation, and online monitoring. An effective condition monitoring approach for SiC MOSFETs is crucial to ensure the safe operation of power electronic systems. A solution based on the acoustic emission (AE) detection technique is proposed in this paper. Through the utilization of time-frequency analysis, the time-frequency characteristics of the AE signals generated by SiC MOSFETs under double-pulse test conditions have been explored. Three multi-dimensional characteristic parameters, namely time-frequency variance, energy entropy, and time-frequency center of gravity, have been used, which can achieve quantitative characterization of the dynamic behavior from SiC MOSFETs. By systematically comparing the time-frequency characteristics of AE signals from SiC MOSFETs under normal operating conditions and typical faulty states, the experimental results indicate that the combination of the three characteristics can be employed to identify different types of faults.

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基于声发射信号时频分析的SiC mosfet故障诊断

在SiC mosfet的高频开关应用中，传统技术在实现无创测量、实时评估和在线监测方面面临挑战。一种有效的SiC mosfet状态监测方法对于保证电力电子系统的安全运行至关重要。本文提出了一种基于声发射（AE）探测技术的解决方案。利用时频分析方法，研究了SiC mosfet在双脉冲测试条件下产生声发射信号的时频特性。利用时频方差、能量熵和时频重心三个多维特征参数，可以定量表征SiC mosfet的动态行为。通过系统比较正常工作状态和典型故障状态下SiC mosfet声发射信号的时频特性，实验结果表明，三种特性的结合可用于识别不同类型的故障。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.