Molecular insights into NO2 sensing through doped armchair graphene nanoribbon

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Kamal Solanki , Ayush Kumar Pandit , Manoj Kumar Majumder (Senior Member, IEEE)
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引用次数: 0

Abstract

An escalating concern from the Nitrogen dioxide (NO2) molecules induces respiratory issues, necessitating the development of highly sensitive sensors. In response to this pressing issue, the research proposed a novel methodology leveraging hydrogen (H) passivated armchair graphene nanoribbons (ArGNR). These nanoribbons are successively substituted with reactive non-metal phosphorus (P) and post-transition metals (aluminum (Al) and gallium (Ga)) to enhance the sensitivity of the ArGNR to the NO2 molecules. The introduction of this dopant increases the density of adsorption sites, leading to a higher interaction with the NO2 molecule. Moreover, to ensure accuracy, the electronic properties are rigorously examined through the density functional theory (DFT) with spin polarization and unpolarization calculation, within the linear combination of atomic orbitals (LCAO) framework. Initially, the investigation focuses on a width-3 ArGNR, substituted with P at all the carbon (C) sites, and identifies an optimal site for the dopant incorporation. Subsequently, the Al and Ga substitution at these sites results in a notable 10–20 % increase in adsorption energy (Eads) compared to the P-doped ArGNR. In addition, the research extended to the wider ArGNR (widths of 4 and 5 C atoms), where the introduction of dopants further influences the electronic properties. The results demonstrate that the Al-doped width-3 ArGNR exhibits optimal Eads and increased desorption (rdes) of −3.32 eV and 0.17 eV, following NO2 adsorption, respectively. The band gap (EG) also delineates a decrement of 42.5 % post-adsorption, signifying a high sensitivity. Furthermore, it is discerned that Al manifests as a promising dopant in ArGNR for sensing.
通过掺杂扶手椅石墨烯纳米带对NO2传感的分子洞察
二氧化氮(NO2)分子引起的不断升级的担忧引起呼吸问题,需要开发高灵敏度传感器。针对这一紧迫问题,本研究提出了一种利用氢钝化扶手椅石墨烯纳米带(ArGNR)的新方法。这些纳米带依次被活性非金属磷(P)和过渡后金属(铝(Al)和镓(Ga))取代,以提高ArGNR对NO2分子的灵敏度。这种掺杂剂的引入增加了吸附位点的密度,导致与NO2分子的相互作用更高。此外,为了确保准确性,在原子轨道线性组合框架内,通过密度泛函理论(DFT)和自旋极化和非极化计算严格检查了电子性质。最初,研究的重点是宽度为3的ArGNR,在所有碳(C)位点上都被P取代,并确定了掺杂剂掺入的最佳位点。随后,与p掺杂的ArGNR相比,这些位点的Al和Ga取代导致吸附能(Eads)显著增加10 - 20%。此外,研究扩展到更宽的ArGNR(4和5 C原子的宽度),其中掺杂剂的引入进一步影响了电子性能。结果表明,在NO2吸附后,掺al宽度-3的ArGNR具有最佳的Eads和增加的脱附(rdes),分别为- 3.32 eV和0.17 eV。带隙(EG)也描述了吸附后42.5%的衰减,表明高灵敏度。此外,还发现Al在ArGNR传感中是一种很有前途的掺杂剂。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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