Experimental investigation of 7-level stacked nanosheet nMOSFETs for high-temperature applications

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-08-12 DOI:10.1016/j.sse.2025.109207

Michelly de Souza , Marcelo A. Pavanello , Mikaël Cassé , Sylvain Barraud

引用次数: 0

Abstract

This study experimentally investigates the electrical characteristics of seven-level stacked nanosheet SOI nMOSFETs for high-temperature applications. The experimental findings reveal a significant advantage of this architecture, demonstrating a reduced threshold voltage variation with temperature compared to both two-level stacked nanosheet transistors and state-of-the-art Fully-Depleted SOI MOSFETs. Furthermore, analysis of the normalized transconductance per total width indicates that the enhancement in carrier mobility, typically observed for wider nanosheets relative to narrower ones, tends to saturate for wider devices and to reduce as the operating temperature increases. Also, the normalized transconductance per channel length indicates a reduction of mobility for short-channel devices.

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高温应用中7能级堆叠纳米片nmosfet的实验研究

本研究通过实验研究了用于高温应用的七能级堆叠纳米片SOI nmosfet的电学特性。实验结果揭示了该结构的显著优势，与两级堆叠纳米片晶体管和最先进的全耗尽SOI mosfet相比，该结构的阈值电压随温度的变化减小。此外，对每总宽度的归一化跨导的分析表明，载流子迁移率的增强，通常是在较宽的纳米片上观察到的，随着工作温度的升高，载流子迁移率趋于饱和，并且随着工作温度的升高而降低。此外，每个通道长度的标准化跨电导表明了短通道器件的迁移率降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.