Threshold Voltage Shift of Flexible P-Type Poly-Silicon Thin Film Transistors Under Illumination Stress

IF 2.4 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-08-04 DOI:10.1109/JEDS.2025.3595808

Weipeng Ji;Huaisheng Wang;Mingxiang Wang;Dongli Zhang;Nannan Lv;Qi Shan

引用次数: 0

Abstract

The reliability of flexible p-type low temperature poly-silicon thin film transistors (TFTs) under sole illumination stress was investigated. As the TFT was exposed to illumination, the transfer characteristic curves of the TFTs shifted positively, accompanied by an increase in the off-state current. Through altering the wavelength and intensity of the light, the degradation mechanism for TFTs under illumination stresses can be attributed to photoexcited carriers and residual hydrogen diffusion from the Si3N4 layer to air, leading to a forward shift in the threshold voltage. Moreover, TFTs exposed to the air for an extended period can also effectively remove residual hydrogen in the silicon nitride layer, thereby effectively suppressing photoinduced degradation of the device and improving its reliability.

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光照应力下柔性p型多晶硅薄膜晶体管的阈值电压偏移

研究了柔性p型低温多晶硅薄膜晶体管（TFTs）在单一光照应力下的可靠性。当TFT暴露在光照下时，TFT的转移特性曲线呈正位移，同时伴有关断电流的增大。通过改变光的波长和强度，TFTs在照明应力下的降解机制可以归结为光激发载流子和残余氢从Si3N4层扩散到空气中，导致阈值电压正移。此外，tft长时间暴露在空气中还可以有效去除氮化硅层中残留的氢，从而有效抑制器件的光致降解，提高器件的可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.