AC Impedance Compared to DC Characterization for Source-Drain Resistance in Junctionless Gate-All-Around MOSFETs

IF 2.4 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-08-04 DOI:10.1109/JEDS.2025.3595171

Hung-Hsi Chen;Ching-Lun Wang;Yao-Jen Lee;Wen-Teng Chang

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引用次数: 0

Abstract

This study investigates the frequency-dependent AC source-drain impedance (ZDS) in p-type junctionless gate-all-around (JLGAA) MOSFETs, and compares it to the DC source-drain resistance (RDS) under various biasing and stress conditions. The analysis focuses on how RDS and ZDS respond to different gate voltages, providing insight into their influence on device performance. While RDS is extracted from the ohmic region of conventional ID-VD measurements, ZDS is obtained directly using impedance analysis to capture frequency-dependent behavior. Results reveal that during turn-on, RDS is slightly lower than ZDS, although ZDS retains a mainly resistive profile. However, after reliability stress and near the quasi turn-off regime, a more pronounced divergence between RDS and ZDS is observed. This is attributed to reduced channel conductivity and increasing frequency-dependent effects. At higher reverse gate bias, ZDS exhibits noticeable capacitive behavior due to enhanced channel depletion, and this effect becomes more significant as the channel length increases. These findings highlight the critical role of ZDS in assessing the dynamic performance of JLGAA FETs. Unlike static RDS characterization, frequency-sensitive impedance measurements offer deeper insight into AC behavior, supporting more accurate modeling and optimization under time-varying or transient operating conditions.

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交流阻抗与直流阻抗在无结栅极全能mosfet中源漏电阻的比较

本文研究了p型无结栅极全通（JLGAA） mosfet中频率相关的交流源漏阻抗（ZDS），并将其与不同偏置和应力条件下的直流源漏电阻（RDS）进行了比较。分析的重点是RDS和ZDS如何响应不同的栅极电压，从而深入了解它们对器件性能的影响。RDS是从传统的ID-VD测量的欧姆区提取的，而ZDS是直接通过阻抗分析来获取频率相关行为的。结果表明，在导通过程中，RDS略低于ZDS，但ZDS仍以电阻为主。然而，在可靠性应力之后，接近准关断状态，RDS和ZDS之间的差异更加明显。这归因于通道电导率降低和频率依赖效应增加。在较高的反向栅极偏置下，由于沟道损耗增强，ZDS表现出明显的电容性行为，并且随着沟道长度的增加，这种效应变得更加显著。这些发现强调了ZDS在评估JLGAA场效应管动态性能中的关键作用。与静态RDS特性不同，频率敏感阻抗测量可以更深入地了解交流行为，支持在时变或瞬态工作条件下更准确的建模和优化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.