Construction of a novel ZnWO4/MIL-53(Fe) heterojunction photocatalyst for the boosted tetracycline degradation under visible-light irradiation

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-08-20 DOI:10.1016/j.mssp.2025.109982

Zhongquan Jiang , Jietong Yang , Fangyan Chen, Yanhua Song, Yubin Tang

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引用次数: 0

Abstract

Advanced photocatalytic technology plays a vital role in addressing organic pollutant degradation, and developing highly efficient heterojunction photocatalysts is one of the research hotspots in the field of photocatalysis. Herein, we integrated the merits of ZnWO₄ nanoparticles and spindle-shaped MIL-53(Fe) to construct a novel ZnWO₄/MIL-53(Fe) heterojunction. The fabricated ZnWO₄/MIL-53(Fe) underwent a variety of characterization. An evaluation was conducted on the photocatalytic activity and stability of ZnWO₄/MIL-53(Fe) toward tetracycline (TC) degradation. Based on the band alignment and the production of active species, the photocatalytic mechanism and interfacial charge transfer mode were proposed. The prepared ZnWO₄/MIL-53(Fe) composites exhibit high photocatalytic activity under visible light. The optimum composites ZnM-20 achieves the highest degradation efficiency of TC, significantly outperforming the individual components ZnWO₄ and MIL-53(Fe). The photocatalytic degradation rate constant for TC was determined as 0.01221 min⁻¹, which is 28.5 and 58.8 times that of MIL-53(Fe) and ZnWO₄, respectively. The improvement in the catalytic activity of ZnM-20 is attributed to the high visible-light absorption ability, significantly enlarged specific surface area, and the greatly accelerated charge separation and migration due to the formation of the heterostructure between ZnWO₄ and MIL-53(Fe) and the cyclic redox reactions of Fe(III)/Fe(II) in MIL-53(Fe). ZnWO₄/MIL-53(Fe) presents good stability and reusability. The light-excited charge carriers migrate in the heterojunction interface complies with Type-II transfer mechanism. This work provides a meaningful strategy for developing efficient photocatalysts for environmental remediation.

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新型ZnWO4/MIL-53（Fe）异质结光催化剂的构建促进四环素在可见光下的降解

先进的光催化技术在解决有机污染物降解问题中起着至关重要的作用，而开发高效的异质结光催化剂是光催化领域的研究热点之一。在此，我们将ZnWO4纳米颗粒和纺锤形MIL-53（Fe）的优点结合起来，构建了一种新的ZnWO4/MIL-53（Fe）异质结。制备的ZnWO4/MIL-53（Fe）进行了各种表征。对ZnWO4/MIL-53（Fe）光催化降解四环素的活性和稳定性进行了评价。基于带对准和活性物质的产生，提出了光催化机理和界面电荷转移模式。制备的ZnWO4/MIL-53（Fe）复合材料在可见光下表现出较高的光催化活性。最佳复合材料ZnM-20对TC的降解效率最高，显著优于单个组分ZnWO4和MIL-53（Fe）。测定了TC的光催化降解速率常数为0.01221 min−1，分别是MIL-53（Fe）和ZnWO4的28.5和58.8倍。ZnM-20催化活性的提高是由于ZnWO4与MIL-53（Fe）之间异质结构的形成以及MIL-53（Fe）中Fe(III)/Fe（II）的循环氧化还原反应大大加速了电荷的分离和迁移。ZnWO4/MIL-53（Fe）具有良好的稳定性和可重用性。光激发载流子在异质结界面迁移符合ii型转移机制。这项工作为开发高效的光催化剂进行环境修复提供了有意义的策略。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.