Qi Li , Zezheng Li , Han Yan , Zhenyi Ren , Changxun Li , Aidong Liu , Wenxuan Pang , Guanheng Ren , Mingqing Liao , Rongmei Zhang , Fengjiang Wang
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引用次数: 0
Abstract
With the rapid advancement of electronic packaging toward high integration and miniaturization, the wettability of Sn-based solders has become increasingly critical, as it directly governs the formation of reliable metallurgical bonds and the service performance of micro-joints. This review systematically summarizes the fundamental principles and evaluation methods of solder wettability, focusing on contact angle, the core indicator regulated by the interfacial tension equilibrium described by Young's equation, along with spreading area, wetting force, and wetting time (the latter quantified via the wetting balance method). Moreover, the optimization strategies for wettability are elaborated from multiple dimensions: substrate surface treatment, including roughness control, texture design via directional microstructures to guide anisotropic spreading, and coating technology to modify surface energy and inhibit oxidation; solder alloying, which involves incorporating trace elements such as rare earths, nanoparticles, or active metals to reduce surface tension, promote interfacial reactions, and regulate intermetallic compound formation; flux formulation, where inorganic and organic fluxes function in chemical oxide removal and interfacial energy reduction; and process environment control, including temperature regulation to lower viscosity, protective atmosphere to suppress oxidation, and ultrasound-assisted technology to mechanically disrupt oxide films via the cavitation effect. These strategies, integrating substrate, solder, and process factors, provide a comprehensive theoretical framework to address the wettability limitations of lead-free solders, offering crucial technical support for the development of high-performance electronic packaging.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.