Current status on optimizing solder wettability from substrate surface treatment, alloying solder, flux, and process environments

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Qi Li , Zezheng Li , Han Yan , Zhenyi Ren , Changxun Li , Aidong Liu , Wenxuan Pang , Guanheng Ren , Mingqing Liao , Rongmei Zhang , Fengjiang Wang
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Abstract

With the rapid advancement of electronic packaging toward high integration and miniaturization, the wettability of Sn-based solders has become increasingly critical, as it directly governs the formation of reliable metallurgical bonds and the service performance of micro-joints. This review systematically summarizes the fundamental principles and evaluation methods of solder wettability, focusing on contact angle, the core indicator regulated by the interfacial tension equilibrium described by Young's equation, along with spreading area, wetting force, and wetting time (the latter quantified via the wetting balance method). Moreover, the optimization strategies for wettability are elaborated from multiple dimensions: substrate surface treatment, including roughness control, texture design via directional microstructures to guide anisotropic spreading, and coating technology to modify surface energy and inhibit oxidation; solder alloying, which involves incorporating trace elements such as rare earths, nanoparticles, or active metals to reduce surface tension, promote interfacial reactions, and regulate intermetallic compound formation; flux formulation, where inorganic and organic fluxes function in chemical oxide removal and interfacial energy reduction; and process environment control, including temperature regulation to lower viscosity, protective atmosphere to suppress oxidation, and ultrasound-assisted technology to mechanically disrupt oxide films via the cavitation effect. These strategies, integrating substrate, solder, and process factors, provide a comprehensive theoretical framework to address the wettability limitations of lead-free solders, offering crucial technical support for the development of high-performance electronic packaging.
从基板表面处理、合金焊料、助焊剂和工艺环境等方面优化焊料润湿性的现状
随着电子封装向高集成化和小型化的快速发展,锡基焊料的润湿性变得越来越重要,因为它直接决定了可靠的冶金键的形成和微接头的使用性能。本文系统地总结了焊料润湿性的基本原理和评价方法,重点介绍了接触角(Young’s方程描述的界面张力平衡所调节的核心指标)、扩散面积、润湿力和润湿时间(后者通过润湿平衡法量化)。此外,从多个维度阐述了润湿性的优化策略:基材表面处理,包括粗糙度控制,通过定向微结构设计纹理以引导各向异性扩散,以及涂层技术来改变表面能和抑制氧化;焊料合金化,包括加入微量元素,如稀土、纳米颗粒或活性金属,以降低表面张力,促进界面反应,并调节金属间化合物的形成;助焊剂配方,其中无机和有机助焊剂在化学氧化去除和界面能降低中起作用;以及工艺环境控制,包括温度调节以降低粘度,保护气氛以抑制氧化,以及超声波辅助技术通过空化效应机械破坏氧化膜。这些策略整合了衬底、焊料和工艺因素,为解决无铅焊料的润湿性限制提供了一个全面的理论框架,为高性能电子封装的发展提供了关键的技术支持。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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