A Scalable mK DC Demultiplexer With Extremely Low OFF-Leakage CMOS Switches for Biasing of Spin Qubits

IF 2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Alican Caglar;Imri Fattal;Clement Godfrin;Roy Li;Steven Van Winckel;Kristiaan De Greve;Piet Wambacq;Jan Craninckx
{"title":"A Scalable mK DC Demultiplexer With Extremely Low OFF-Leakage CMOS Switches for Biasing of Spin Qubits","authors":"Alican Caglar;Imri Fattal;Clement Godfrin;Roy Li;Steven Van Winckel;Kristiaan De Greve;Piet Wambacq;Jan Craninckx","doi":"10.1109/LSSC.2025.3591584","DOIUrl":null,"url":null,"abstract":"This letter demonstrates a DC demultiplexer using CMOS switches with extremely low OFF-state current at mK temperatures. The DC demultiplexer is designed to reduce the number of interconnections needed for voltage biasing of large-scale spin qubit arrays. The demultiplexer utilizes a T-switch structure and thick-oxide devices in a 65 nm bulk CMOS technology to avoid current leakage in the OFF-state of switches at mK temperatures, which enables preservation of a voltage stored on a capacitor without the need for resampling thereby reducing dynamic power consumption. The demultiplexer has a static power consumption of 33 nW with 4 inputs and 16 outputs, which can be scaled up using the SPI interface of the demultiplexer in a daisy-chain configuration. With its scalability, ultralow static power dissipation, and extremely low OFF-leakage current, the DC demultiplexer can help mitigate the wiring bottleneck of spin-based quantum computers at the base stage of dilution refrigerators.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"8 ","pages":"221-224"},"PeriodicalIF":2.0000,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/11089952/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0

Abstract

This letter demonstrates a DC demultiplexer using CMOS switches with extremely low OFF-state current at mK temperatures. The DC demultiplexer is designed to reduce the number of interconnections needed for voltage biasing of large-scale spin qubit arrays. The demultiplexer utilizes a T-switch structure and thick-oxide devices in a 65 nm bulk CMOS technology to avoid current leakage in the OFF-state of switches at mK temperatures, which enables preservation of a voltage stored on a capacitor without the need for resampling thereby reducing dynamic power consumption. The demultiplexer has a static power consumption of 33 nW with 4 inputs and 16 outputs, which can be scaled up using the SPI interface of the demultiplexer in a daisy-chain configuration. With its scalability, ultralow static power dissipation, and extremely low OFF-leakage current, the DC demultiplexer can help mitigate the wiring bottleneck of spin-based quantum computers at the base stage of dilution refrigerators.
一种可扩展的mK DC解复用器,具有极低的off -漏CMOS开关,用于自旋量子位的偏置
这封信演示了一个使用CMOS开关的直流解复用器,在mK温度下具有极低的关闭状态电流。直流解复用器的设计是为了减少大规模自旋量子比特阵列电压偏置所需的互连数量。该解复用器采用了t型开关结构和厚氧化物器件,采用65nm大块CMOS技术,避免了mK温度下开关关闭状态下的电流泄漏,这使得存储在电容器上的电压得以保存,而无需重新采样,从而降低了动态功耗。该解复用器的静态功耗为33 nW,具有4个输入和16个输出,可以使用菊花链配置的解复用器的SPI接口进行缩放。直流解复用器具有可扩展性、超低静态功耗和极低的off漏电流,可以帮助缓解稀释冰箱基础阶段基于自旋的量子计算机的布线瓶颈。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信