The Response Frequency of Interface Traps Using a Dual-Frequency Charge-Pumping Method and Its Correlation With 1/f Noise

IF 2.4 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-07-28 DOI:10.1109/JEDS.2025.3593374

Yi Jiang;Luping Wang;Kai Chen;Rui Su;Luyu Yang;Dawei Gao;Junkang Li;Ran Cheng;Rui Zhang

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引用次数: 0

Abstract

This study shows a novel dual-frequency charge-pumping method, developed to quantitatively characterize the frequency response characteristics of interface traps at the HfO2/Si interface. The response frequency of the interface traps (

$f_{it}$

), or their capture/emission time, has been accurately evaluated in the range of 5-100 MHz across different energy levels by modulating the charge-pumping voltage waveforms. The analysis of

$f_{it}$

provides valuable insights into the 1/f noise behavior of MOS devices, as confirmed by the observed correlation between 1/f noise and

$f_{it}$

in the typical HfO2/Si n-MOSFETs. Additionally, it was found that the gate oxide traps are predominantly generated at a distance of 0.45 nm away from the HfO2/Si interface, and at an energy of 0.33 eV below conduction band minimum (

$E_{c}$

), under a PBTI stress.

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双频电荷泵浦法界面阱的响应频率及其与1/f噪声的相关性

本研究展示了一种新的双频电荷泵送方法，用于定量表征HfO2/Si界面上界面陷阱的频率响应特性。通过调制电荷泵浦电压波形，在5-100 MHz的不同能级范围内精确地评估了界面阱的响应频率（$f_{it}$）或捕获/发射时间。f_{it}$的分析为MOS器件的1/f噪声行为提供了有价值的见解，正如在典型的HfO2/Si n- mosfet中观察到的1/f噪声与$f_{it}$之间的相关性所证实的那样。此外，发现在PBTI应力下，栅极氧化物陷阱主要在距HfO2/Si界面0.45 nm处产生，能量低于导带最小值（$E_{c}$） 0.33 eV。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.