Ultraviolet photodetectors based on non-stoichiometric amorphous Ga2O3−δ thin films deposited by radio-frequency powder sputtering

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-08-16 DOI:10.1016/j.mssp.2025.109972

Jihoon Jo , Dongwoo Kim , Okkyun Seo , Bongjin Simon Mun , Hyon Chol Kang

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Abstract

We report the performance of ultraviolet (UV) photodetectors based on non-stoichiometric amorphous Ga₂O_3−δ thin films deposited using the radio-frequency powder sputtering method. At a substrate temperature of 25 °C, the Ga₂O_3−δ film grew with an amorphous phase on a sapphire (0001) substrate. Hard X-ray photoelectron spectroscopy analysis revealed that the chemical composition of the as-deposited thin film was highly non-stoichiometric owing to the oxygen deficiency associated with sub-oxide Ga₂O and metallic Ga species. Metal–semiconductor–metal photodetectors were fabricated, and their photoresponse properties under UV exposure were investigated. The photo-to-dark current ratio was estimated to be 2.91 × 10⁵. The photoresponsivity and specific detectivity were calculated to be ∼29.54 A/W and 8.95 × 10¹⁴ Jones, respectively, at an applied bias of 10 V and a wavelength of 250 nm. Our results indicate that non-stoichiometric amorphous Ga₂O_3−δ thin films with thicknesses less than 100 nm are suitable for the fabrication of solar-blind photodetectors with self-powered characteristics.

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射频粉末溅射沉积非化学计量非晶Ga2O3−δ薄膜的紫外光电探测器

本文报道了射频粉末溅射法沉积非化学计量非晶Ga2O3−δ薄膜的紫外（UV）光电探测器的性能。在衬底温度为25℃时，Ga2O3−δ薄膜在蓝宝石（0001）衬底上以非晶相生长。硬x射线光电子能谱分析表明，由于亚氧化物Ga2O和金属Ga的缺乏，沉积薄膜的化学成分高度非化学计量。制备了金属-半导体-金属光电探测器，研究了其在紫外照射下的光响应特性。光暗电流比估计为2.91 × 105。在施加偏压为10 V、波长为250 nm时，计算得到的光响应率和比探测率分别为~ 29.54 A/W和8.95 × 1014 Jones。我们的研究结果表明，厚度小于100 nm的非化学计量非晶Ga2O3−δ薄膜适合于制造具有自供电特性的太阳盲光电探测器。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.