B. Esser;J. C. Stephens;J. C. Dickens;A. A. Neuber;J. J. Mankowski;C. A. Chapin;Q. Shao;D. O. Smith;L. F. Voss;J. A. Schrock;B. Hoff;S. Heidger
{"title":"Testing of Novel Semiconductor Opening Switches Using Magnetic Switching","authors":"B. Esser;J. C. Stephens;J. C. Dickens;A. A. Neuber;J. J. Mankowski;C. A. Chapin;Q. Shao;D. O. Smith;L. F. Voss;J. A. Schrock;B. Hoff;S. Heidger","doi":"10.1109/TPS.2025.3586185","DOIUrl":null,"url":null,"abstract":"The performance of semiconductor opening switch (SOS) diodes with different doping profiles is assessed with the primary aim of enhancing or substituting hard-to-find devices. SOS devices are capable of providing long lifetime, gigawatt level pulses in generators with risetimes on the nanosecond scale with pulse widths on the order of 20 ns. An experimental testbed is described which allows for rapid testing of diodes with control of the forward pumping time which is a crucial parameter of SOS diodes. A saturable pulse transformer provides both the initial voltage multiplication and reverse current pulse required to drive SOS diodes. Voltage multiplication ratios of 16:1 were achieved with a modest charging voltage of 800 V and simple circuitry. With current densities of up to 1.4 kA <inline-formula> <tex-math>$\\cdot $ </tex-math></inline-formula> <inline-formula> <tex-math>$\\text{cm}^{\\text {-2}}$ </tex-math></inline-formula>, the testbed produces 10 kV output pulses into a <inline-formula> <tex-math>$56~\\Omega $ </tex-math></inline-formula> load with a pulsewidth of 16 ns and delivered power of up to 1.9 MW. These novel devices are compared to legacy SOS diodes originating from Russia, with one of the profiles yielding increased performance. These profiles are studied in hopes of creating manufacturing demand to augment the availability of these useful devices.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"53 8","pages":"1976-1981"},"PeriodicalIF":1.5000,"publicationDate":"2025-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Plasma Science","FirstCategoryId":"101","ListUrlMain":"https://ieeexplore.ieee.org/document/11078665/","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, FLUIDS & PLASMAS","Score":null,"Total":0}
引用次数: 0
Abstract
The performance of semiconductor opening switch (SOS) diodes with different doping profiles is assessed with the primary aim of enhancing or substituting hard-to-find devices. SOS devices are capable of providing long lifetime, gigawatt level pulses in generators with risetimes on the nanosecond scale with pulse widths on the order of 20 ns. An experimental testbed is described which allows for rapid testing of diodes with control of the forward pumping time which is a crucial parameter of SOS diodes. A saturable pulse transformer provides both the initial voltage multiplication and reverse current pulse required to drive SOS diodes. Voltage multiplication ratios of 16:1 were achieved with a modest charging voltage of 800 V and simple circuitry. With current densities of up to 1.4 kA $\cdot $ $\text{cm}^{\text {-2}}$ , the testbed produces 10 kV output pulses into a $56~\Omega $ load with a pulsewidth of 16 ns and delivered power of up to 1.9 MW. These novel devices are compared to legacy SOS diodes originating from Russia, with one of the profiles yielding increased performance. These profiles are studied in hopes of creating manufacturing demand to augment the availability of these useful devices.
期刊介绍:
The scope covers all aspects of the theory and application of plasma science. It includes the following areas: magnetohydrodynamics; thermionics and plasma diodes; basic plasma phenomena; gaseous electronics; microwave/plasma interaction; electron, ion, and plasma sources; space plasmas; intense electron and ion beams; laser-plasma interactions; plasma diagnostics; plasma chemistry and processing; solid-state plasmas; plasma heating; plasma for controlled fusion research; high energy density plasmas; industrial/commercial applications of plasma physics; plasma waves and instabilities; and high power microwave and submillimeter wave generation.