Compact Millimeter-Wave Single- and Dual-Band On-Chip Bandpass Filters Using GaAs Technology

IF 2.4 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-07-14 DOI:10.1109/JEDS.2025.3588470

Yongzheng Li;Xiaoyu Weng;Kai-Da Xu

引用次数: 0

Abstract

In this paper, two compact on-chip bandpass filters (BPFs) at millimeter-wave frequencies, i.e., single-band BPF and dual-band BPF, are proposed in gallium arsenide (GaAs) technology. To understand the working mechanism of the single-band BPF, a transmission line (TL) equivalent circuit model is presented and analyzed to estimate the position of the transmission zeros (TZs). Based on the single-band BPF structure, two additional metallic strips on M1 layer are placed beneath the pair of meander strips to construct a dual-band BPF. Consequently, a dual-band frequency response can be realized by introducing two TZs within the passband. For demonstration, two prototypes of the BPF are fabricated and tested to validate the proposed idea, whose simulated and measured results are in good agreement. Both of the single- and dual-band BPFs have the same chip size of only 0.29 mm

$\times 0$

.23 mm, excluding the feeding.

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采用砷化镓技术的紧凑型毫米波单频和双频片上带通滤波器

本文在砷化镓（GaAs）技术中提出了两种毫米波频率下的紧凑型片上带通滤波器（BPF），即单带带通滤波器和双带带通滤波器。为了理解单频段BPF的工作机理，提出并分析了传输线等效电路模型，以估计传输零点的位置。在单带BPF结构的基础上，在M1层上的两个额外的金属带放置在一对弯曲带的下方，以构建双带BPF。因此，可以通过在通带内引入两个TZs来实现双带频率响应。为了验证所提出的想法，制作了两个BPF原型并进行了测试，其模拟和测量结果很好地吻合。单频和双频bpf的芯片尺寸相同，仅为0.29 mm × 0.23 mm（不包括馈电）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.