Analysis and Modeling of Intrinsic Capacitance in Enhancement Mode GaN HEMT

IF 2.4 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-07-11 DOI:10.1109/JEDS.2025.3588180

Taeyoung Cho;Jesun Park;Sungyeop Jung;Myounggon Kang

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引用次数: 0

Abstract

This paper analyzes the intrinsic capacitance of enhancement-mode (e-mode) Gallium Nitridebased High Electron Mobility Transistor (GaN HEMTs). The intrinsic capacitance was measured using

$C_{i s s}$

(input capacitance),

$C_{o s s}$

(output capacitance), and

$C_{r s s}$

(reverse transfer capacitance). The

$C_{o s s}$

was also analyzed. Based on depletion-mode (d-mode) measurement data from the MIT virtual source GaN HEMT (MVSG) compact model, a measurement circuit for

$C_{i s s}, C_{o s s}$

and

$C_{r s s}$

was constructed and calibrated for reliability. Subsequently, the circuit, initially configured for d-mode GaN HEMT intrinsic capacitance measurements, was optimized for e-mode GaN HEMT, upon which intrinsic capacitance was measured. The influence on the graph was analyzed by varying parameters in the measured capacitance data, leading to the modeling of intrinsic capacitance.

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增强模式GaN HEMT本征电容的分析与建模

分析了增强型氮化镓基高电子迁移率晶体管（GaN HEMTs）的本征电容。本征电容采用$C_{i s s}$（输入电容）、$C_{o s}$（输出电容）和$C_{r s s}$（反向传递电容）测量。对$C_{0 s}$也进行了分析。基于MIT虚拟源GaN HEMT （MVSG）紧凑模型的耗尽模式（d-mode）测量数据，构建了$C_{i s s}、$C_{o s s}$和$C_{r s s}$的测量电路，并对其进行了可靠性校准。随后，将最初配置用于d模GaN HEMT固有电容测量的电路优化为用于e模GaN HEMT，并在此基础上测量固有电容。通过改变测量电容数据中的参数来分析对图形的影响，从而建立本征电容的模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.