A Bottom Charge-Modulated Field Limiting Rings Termination With N-P-N Sandwich Epitaxial Wafers for 4H-SiC Devices

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-06-20 DOI:10.1109/LED.2025.3581587

Jun Yuan;Zhijie Cheng;Fei Guo;Kuan Wang;Wei Chen;Yangyang Wu;Shaodong Xu;Rong Zhang;Guoqing Xin;Zhiqiang Wang

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Abstract

In this letter, a bottom charge-modulated field limiting rings termination with N-P-N sandwich epitaxial wafers for 4H-SiC devices is proposed and experimentally demonstrated. The proposed termination has more stable breakdown voltage than the conventional structure, because the lower concentration of P+ buried layer can be completely depleted. The breakdown voltage is as high as 1730 V. With the increase of temperature, the breakdown voltage continues to rise and has a relatively stable temperature coefficient. Further, the influence of N+ current spread layer on the breakdown ability of different epitaxial designs is fully discussed, and the reasonable electric field distribution of the proposed termination is demonstrated. It is found that high P+ buried layer concentration will lead to uneven distribution of electric field. However, the P+ buried layer has sufficient design margin. It is verified that the proposed termination has less influence on over etching depth in the P-shield region and initial ring spacing. The proposed termination has excellent breakdown performance, indicating the potential for power devices of the future.

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用于4H-SiC器件的N-P-N夹层外延片底电荷调制场限制环端接

本文提出了一种用于4H-SiC器件的N-P-N夹层外延片底电荷调制场限制环终端，并进行了实验验证。由于较低浓度的P+埋藏层可以被完全耗尽，因此与传统结构相比，该端接具有更稳定的击穿电压。击穿电压高达1730v。随着温度的升高，击穿电压不断升高，并具有相对稳定的温度系数。进一步，充分讨论了N+展流层对不同外延设计击穿能力的影响，并论证了所提出的终端的合理电场分布。发现高P+埋层浓度会导致电场分布不均匀。而P+埋层具有足够的设计余量。结果表明，该端接方式对p屏蔽区过刻蚀深度和初始环间距的影响较小。所提出的终端具有优异的击穿性能，预示着未来功率器件的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.