2T1M and Complementary 3T2M Type-XY SOT-MRAM With High Performance and High Density

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-06-24 DOI:10.1109/LED.2025.3582797

C.-Y Hu;M. Y. Song;G. L. Chen;K. M. Chen;K. T. Chang;I. J. Wang;Y. C. Hsin;S. Y. Yang;S. H. Li;J. H. Wei;T. Y. Lee;X. Y. Bao

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引用次数: 0

Abstract

Type-XY SOT-MRAM is promising to achieve smaller footprint compared to the type-Y cells, and to circumvent the non-deterministic characteristic suffered by the type-X switching. This work verifies the high performance of type-XY switching in a 2-transistor-1-memory (2T1M) array, showing the capability of low write-error-rate (<0.1%)> ${8}\times {10} ^{{11}}$ cycles@±0.8V/100ns) with low write error rate (<0.1%@1V/500ns).> $0.61\times $ cell size with

$0.41\times $

write power in traditional 2T1M,

$0.67\times $

cell size with

$0.10\times $

operation power in 3T2M for complementary write function. Considering the sharable processes between 2T1M and 3T2M, using type-XY cells can be a fabrication-friendly solution to facilitate the integration of multifunctional memories in the advanced chips.

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2T1M和互补的3T2M型xy型SOT-MRAM，高性能高密度

与y型电池相比，xy型SOT-MRAM有望实现更小的占地面积，并规避x型切换所带来的不确定性特性。本工作验证了2-晶体管-1-存储器（2T1M）阵列中xy型开关的高性能，显示了低写错误率（${8}\times {10} ^{{11}}$ cycles@±0.8V/100ns）和低写错误率（传统2T1M的$0.61\倍单元尺寸和$0.41\倍写入功率，3T2M的$0.67\倍单元尺寸和$0.10\倍操作功率）的能力，用于补充写入功能。考虑到2T1M和3T2M之间的共享过程，使用xy型单元可以是一种易于制造的解决方案，有助于在先进芯片中集成多功能存储器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.