{"title":"Enhanced photocatalytic water-splitting performance of Fe/CdS nanomaterials: Structural, optical, and electrochemical insights","authors":"Harshavardhan Mohan, Taeho Shin","doi":"10.1016/j.mssp.2025.109892","DOIUrl":null,"url":null,"abstract":"<div><div>Photocatalytic water splitting using semiconductors for sustainable hydrogen production is a promising technology. Fe/CdS photocatalysts with varying Fe doping levels were synthesized and systematically characterized. The samples prepared via hydrothermal synthesis were then subjected to comprehensive structural, optical, electrochemical, and photocatalytic analyses. Fe doping induced slight shifts in X-ray diffraction (XRD) peak without altering the CdS crystal structure. The bandgap was reduced from 2.35 eV to 2.19 eV by increasing the Fe doping, enhancing visible-light absorption. X-ray photoelectron spectroscopy confirmed the incorporation of Fe into the CdS lattice. Electrochemical studies showed improved charge-transfer kinetics and redox peaks in cyclic voltammograms. Fe/CdS (0.20:1) achieved the highest hydrogen evolution rate at 54.75 mmol/g/h under visible light, outperforming pristine CdS (30.01 mmol/g/h) and FeS<sub>2</sub> (34.19 mmol/g/h). Stability tests over multiple hydrogen evolution cycles revealed structural integrity and activity retention, which were confirmed by XRD. Fe/CdS photocatalysts are promising for efficient water splitting because of their enhanced optical properties, charge-separation efficiency, and electrochemical activities. Optimization of Fe doping is crucial for maintaining a high photocatalytic efficiency and advancing renewable energy technologies toward greener systems.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109892"},"PeriodicalIF":4.6000,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125006298","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Photocatalytic water splitting using semiconductors for sustainable hydrogen production is a promising technology. Fe/CdS photocatalysts with varying Fe doping levels were synthesized and systematically characterized. The samples prepared via hydrothermal synthesis were then subjected to comprehensive structural, optical, electrochemical, and photocatalytic analyses. Fe doping induced slight shifts in X-ray diffraction (XRD) peak without altering the CdS crystal structure. The bandgap was reduced from 2.35 eV to 2.19 eV by increasing the Fe doping, enhancing visible-light absorption. X-ray photoelectron spectroscopy confirmed the incorporation of Fe into the CdS lattice. Electrochemical studies showed improved charge-transfer kinetics and redox peaks in cyclic voltammograms. Fe/CdS (0.20:1) achieved the highest hydrogen evolution rate at 54.75 mmol/g/h under visible light, outperforming pristine CdS (30.01 mmol/g/h) and FeS2 (34.19 mmol/g/h). Stability tests over multiple hydrogen evolution cycles revealed structural integrity and activity retention, which were confirmed by XRD. Fe/CdS photocatalysts are promising for efficient water splitting because of their enhanced optical properties, charge-separation efficiency, and electrochemical activities. Optimization of Fe doping is crucial for maintaining a high photocatalytic efficiency and advancing renewable energy technologies toward greener systems.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.