Recent advances in micro and nanostructured GaN based photonics technology

Abstract

Gallium nitride (GaN) has emerged as a pivotal material in photonics due to its exceptional optical and electronic properties, including a wide bandgap, high thermal stability, and robust performance in extreme conditions. This review highlights recent advancements in micro- and nanostructured GaN-based photonics, focusing on both linear and nonlinear optical properties, device applications, and the integration of nanostructures and metamaterials. GaN’s linear optical properties, such as high refractive index and low optical losses, have led to innovations in waveguides, microcavities, high-efficiency LEDs and µLEDs. In nonlinear optics, GaN’s strong second- and third-order nonlinear responses enable frequency conversion and ultrafast photonics, with applications in frequency doubling, nonlinear waveguides, and optical parametric oscillators. The development of integrated GaN photonic circuits, incorporating both linear and nonlinear devices, is paving the way for compact, multifunctional photonic systems for telecommunications and quantum technologies. Additionally, GaN-based metamaterials and hybrid devices are opening new avenues for advanced optical functionalities. Despite challenges in fabrication and integration, the future of GaN-based photonics is poised for significant advancements, with potential breakthroughs in quantum photonics, sensing, and energy-efficient optical systems.