Degradation of high reliability lead-free solder joints under harsh thermal cycling test

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Jeyun Yeom, Hans Rudolf Elsener, Tobias Burgdorf, Regina Bischoff, Lars P.H. Jeurgens, Jolanta Janczak-Rusch
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Abstract

In this study, the degradation behavior of solder joints made using pre-selected, highly reliable lead-free solder alloys was investigated under thermal cycling conditions. Innolot (Sn 3.8Ag 0.7Cu 3.0Bi 1.5Sb 0.2Ni) and SB6NX (Sn 3.5Ag 0.8Cu 0.5Bi 6.0In) as well as reference solders: SAC305 (Sn 3Ag 0.5Cu) and SnPb solder were selected for this study, and solder joints of R1812 ceramic chip resistors on a printed circuit board were prepared by reflow soldering. The mechanical and microstructural degradation of the solder joints was investigated after thermal cycles (3000 cycles) from −55 to +100 °C with extended dwell times of 30 min. The crack length and void area were determined by optical microscopy from joint cross-sections and correlated with maximum shear force degradation obtained in mechanical shear tests. The results of the study support the development of highly reliable surface-mounted components for aerospace applications.
高可靠性无铅焊点在严酷的热循环试验下的退化
在本研究中,研究了在热循环条件下,使用预先选择的、高度可靠的无铅焊料合金制成的焊点的降解行为。本研究选用innoot (Sn 3.8Ag 0.7Cu 3.0Bi 1.5Sb 0.2Ni)和SB6NX (Sn 3.5Ag 0.8Cu 0.5Bi 6.0In)以及参考焊料SAC305 (Sn 3Ag 0.5Cu)和SnPb焊料,采用回流焊的方法在印刷电路板上制备了R1812陶瓷片式电阻焊点。在−55至+100°C的高温循环(3000次)和30分钟的延长停留时间后,研究了焊点的力学和微观结构退化。通过光学显微镜从接头截面确定裂纹长度和空洞面积,并与机械剪切试验中获得的最大剪切力退化相关。研究结果支持了高可靠性表面安装组件的航空航天应用的发展。
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来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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